Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Rovaris, Fabrizio"'
openaire: EC/H2020/857470/EU//NOMATEN Funding Information: We acknowledge support from the European Union Horizon 2020 research and innovation program under grant agreement no. 857470 and from the European Regional Development Fund via the Foundation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______661::5f8bdb7c92dbd609c37b8fb51a39c609
https://aaltodoc.aalto.fi/handle/123456789/115701
https://aaltodoc.aalto.fi/handle/123456789/115701
Autor:
Becker, Lucas, Storck, Peter, Schulz, Tobias, Zoellner, Marvin H., Di Gaspare, Luciana, Rovaris, Fabrizio, Marzegalli, Anna, Montalenti, Francesco, Capellini, Giovanni, Schwalb, Georg, Schroeder, Thomas, Albrecht, Martin
Strain relaxedSi1−𝑥Ge𝑥 buffer layers on Si(001) can be used as virtual substrates for the growth of both strained Si and strained SiGe, which are suitable materials for sub-7 nm CMOS devices due to their enhanced carrier mobility. For indus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::04eb900dc4fb197c6bad66398aa74273
https://zenodo.org/record/6241792
https://zenodo.org/record/6241792
Autor:
ROVARIS, FABRIZIO
Lo sviluppo di dispositivi avanzati nell’ambito della micro e opto-elettronica richiede standard sempre più stringenti sulla qualità dei materiali. Fino ad oggi, l’avanzamento dell’industria microelettronica si è basato sul concetto di minia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::61cbdb086db3934d5ac39a216be13cda
http://hdl.handle.net/10281/263103
http://hdl.handle.net/10281/263103
The interplay between elastic and plastic relaxation during the growth of heteroepitaxial systems is investigated. A continuum model for the growth dynamics, including both deposition and surface diffusion, is developed and applied to Ge/Si(001). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::7ff9b7041f69a4f5eb9861d12f0c327c
http://hdl.handle.net/10281/131854
http://hdl.handle.net/10281/131854
We present a continuum approach able to tackle both elastic and plastic relaxation (via insertion of misfit dislocations) during deposition of Ge on Si(001). Our model is based on a suitable definition of chemical potential, accounting for both surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::6de06cd713ad461820e76cb9b75bd76e
http://hdl.handle.net/10281/127765
http://hdl.handle.net/10281/127765
Autor:
MONTALENTI, FRANCESCO CIMBRO MATTIA, BERGAMASCHINI, ROBERTO, SALVALAGLIO, MARCO, MARZEGALLI, ANNA, MIGLIO, LEONIDA, Backofen, R, ROVARIS, FABRIZIO, ALBANI, MARCO GIOCONDO, Voigt, A
Lattice-mismatched heteroepitaxial growth is nowadays a key step involved in the fabrication of a multitude of devices. However, full control over the different, sometimes competing phenomena taking place during deposition [1] has yet to be reached.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1299::d311fef34c60f10f522ba83f453eb831
http://hdl.handle.net/10281/91656
http://hdl.handle.net/10281/91656
Autor:
Giovanni Capellini, Peter Zaumseil, G Schwalb, Thomas Schroeder, Francesco Montalenti, F Rovaris, Peter Storck, Luciana Di Gaspare, Monica De Seta, Marvin Hartwig Zoellner, Anna Marzegalli
Publikováno v:
PHYSICAL REVIEW B
Regular surface undulations, called cross-hatch patterns, appearing at the free surface of lattice-mismatched heteroepitaxial films are a key signature of plastic relaxation. Here we show that the dynamics of cross-hatch formation is accurately descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e693288b7fb74cd20cd6bd42eb9e621c
https://hdl.handle.net/11590/354446
https://hdl.handle.net/11590/354446