Zobrazeno 1 - 10
of 106
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
SID Symposium Digest of Technical Papers. 45:5-8
We developed new magnetron sputtering equipment called rotation magnet sputtering (RMS), where multiple moving plasma loops are exited on the planar target surface, obtaining high target utilization. The moving plasma loops also worked efficiently to
Autor:
Shigetoshi Sugawa, Hidetoshi Utsumi, Yasuyuki Shirai, Keiichi Hashimoto, Takatoshi Matsuo, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao
Publikováno v:
ECS Transactions. 61:29-37
The SiNx gate spacer formation is one of the key processes in the miniaturized MISFETs, because the thickness of the gate spacer and the Si recess after the gate spacer formation etching have large impacts on the electrical properties of MISFETs [1,2
Autor:
Tadahiro Ohmi, Tsukuru Katsuyama, Isao Makabe, Shigetoshi Sugawa, Yasuyuki Shirai, Kenichi Nakamura, Yukihiro Tsuji, Akinobu Teramoto, Ken Nakata, Tadashi Watanabe
Publikováno v:
physica status solidi c. 10:1557-1560
In order to improve reliability and yield of gallium nitride (GaN) devices, we have developed the formation of an ultra-clean GaN surface and an interface of a passivation layer. The residue or termination materials on the GaN surface were analyzed a
Publikováno v:
IEEE Transactions on Electron Devices. 60:1916-1922
We investigated the SiN/gallium nitride (GaN) interface properties formed by the microwave-excited plasma-enhanced chemical vapor deposition (PECVD) with SiH4/N2/H2 gases. The interface and insulating properties of SiN films on GaN formed by the micr
Publikováno v:
SID Symposium Digest of Technical Papers. 43:760-763
We have developed a new magnetron sputtering equipment called Rotation Magnet Sputtering (RMS), and realized the target utilization rate of more than 60%. We applied this new system to the deposition of a-InGaZnOx films. Comparison of the spatial dis
Autor:
Tomoyuki Suwa, Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, Tadashi Watanabe, Shigetoshi Sugawa, Yukihisa Nakao
Publikováno v:
ECS Transactions. 45:421-428
High chemical etching resistance is strongly required for silicon nitride at low temperature such as 400oC or below in order to apply to the gate spacer, the contact etching stop layer, because various new materials which are thermally instable are i
Autor:
Tetsuya Goto, Tadahiro Ohmi, Seij Yasuda, Atsutoshi Inokuchi, Masayuki Kohno, Masaki Hirayama, Toshio Nakanishi, Kiyotaka Ishibashi, Masaru Sasaki, Masahiro Okesaku, Toshihisa Nozawa
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:686-695
The authors developed a ceramic upper shower plate used in the microwave-excited high-density plasma process equipment incorporating a dual shower-plate structure to establish a very uniform gas-flow pattern in the process chamber. Thousands of very
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:423-429
Multiprocesses in a single plasma process chamber with high throughput require precise, sequential, high-speed alteration of partial pressures of multiple gas species. A conventional gas-distribution system cannot realize this because the system seri
Autor:
Fumikazu Mizutani, Yasuyuki Shirai, Yasuhiro Kasase, Minoru Tahara, Tadahiro Ohmi, Masafumi Kitano
Publikováno v:
ECS Transactions. 16:89-94
Barrier type anodic oxides film of the aluminum alloy in nonaqueous electrolyte solution has some excellent characteristics as a passivation film. In electrolyte that used the ethylene glycol as nonaqueous solution, the thickness of the anodic oxides
Autor:
Tadahiro Ohmi, Kaoru Sakoda, Masaki Hirayama, K. Suzuki, T. Watanabe, Akinobu Teramoto, Yoshio Ishihara, Y. Shirai, T. Ito
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21(4):668-675
In order to minimize contributions to global warming, it is important to develop a perfluorocompound (PFC) abatement system that can remove PFCs effectively with low electric power. We have developed a new PFC abatement system consisting mainly of a