Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Er‐Jia Guo"'
Autor:
Chen Ge, Haizhong Guo, Can Wang, Haotian Lu, Meng He, Guozhen Yang, Er-Jia Guo, Kuijuan Jin, Jiankun Li
Publikováno v:
ACS applied materialsinterfaces. 11(46)
The development of artificial synapses has enabled the establishment of brain-inspired computing systems, which provides a promising approach for overcoming the inherent limitations of current computer systems. The two-terminal memristors that faithf
Autor:
Can Wang, Haizhong Guo, Fanqi Meng, Lin Gu, Hai Zhong, Donggang Xie, Tao Li, Guangyu Zhang, Hao Ni, Chen Ge, Kuijuan Jin, Qin-Chao Sun, Qinghua Zhang, Xiulai Xu, Jianyu Du, Guozhen Yang, Er-Jia Guo, Xingke Fu, Meng He
Publikováno v:
Nano Energy. 89:106439
The rapid development of the artificial intelligence field has increased the demand for retina-inspired neuromorphic vision sensors with integrated sensing, memory, and processing functions. Here, we present a neuromorphic vision sensor with an optoe
Autor:
Xingsen Gao, Haizhong Guo, Shengliang Cheng, Lanqing Hong, Jin Zhao, Er-Jia Guo, Zhipeng Hou, Jingjing Rao, Y. Chen, Zhen Fan, X. Xiang, Xubing Lu, Jun-Ming Liu, Guofu Zhou, Qicheng Huang
Publikováno v:
Materials Today Physics. 18:100392
Distinct from the conductive filament-type counterparts, the interface-type resistive switching (RS) devices are electroforming-free and exhibit bidirectionally continuous conductance changes, making them promising candidates as analog synapses. Whil
Autor:
Guozhen Yang, Er-Jia Guo, Hai Zhong, Can Wang, Heyi Huang, Kuijuan Jin, Chen Ge, Meng He, Zhuohui Liu
Publikováno v:
Journal of Semiconductors. 42:013103
Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck. To enhance computing performance, neuromorphic computing systems that can simulate the function of the human brain are being developed.
Publikováno v:
Chinese Physics B. 29:098101
Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is pr
Autor:
Jianyu Du, Guo Li, Chen Ge, Heyi Huang, Can Wang, Guozhen Yang, Er-Jia Guo, Hai Zhong, Kuijuan Jin, Qin-Chao Sun, Meng He
Publikováno v:
Chinese Physics B. 29:040703
The further development of traditional von Neumann-architecture computers is limited by the breaking of Moore’s law and the von Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI) systems. Therefo
Publikováno v:
Advanced Electronic Materials. 6:1901408
Autor:
Xiaokang Yao, Guozhen Yang, Er-Jia Guo, Chen Ge, Meng He, Yong Zhou, Shilu Tian, Kuijuan Jin, Can Wang
Publikováno v:
Thin Solid Films. 698:137851
Switchable ferroelectric diode and photovoltaic effects in epitaxial BiFeO3 (BFO) thin films have drawn intense attention for its potential applications in resistive memory and solar cell. However, both of these two effects were observed almost entir
Publikováno v:
Advanced Materials. 27:1615-1618
180° domain wall motion in a tetragonal ferroelectric oxide is accelerated by an order of magnitude using in situ strain in a force microscope. Single-domain PbZr0.2 Ti0.8 O3 films on piezoelectric (001)-oriented 0.72PbMg1/3 Nb2/3 O3 -0.28PbTiO3 sub
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 096107-096107-8 (2014)
The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO) capacitors with La0.8Ca0.2MnO3 (LCMO) bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coerci