Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Tadahiro Ohmi"'
Autor:
Shigetoshi Sugawa, Tadahiro Ohmi, Takuya Sugawara, Yoshitsugu Tanaka, Toshio Nakanishi, Akinobu Teramoto, Shu Ichi Ishizuka, Shigemi Murakawa, Yasushi Akasaka, Masashi Takeuchi, Minoru Honda, Yoshihiro Hirota
Publikováno v:
Japanese Journal of Applied Physics. 47:5380-5384
Nitrogen profile variations were systematically studied for the plasma nitridation process of the dynamic random access memory (DRAM) gate dielectrics, using angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and their influences to the boron
Autor:
Tadahiro Ohmi, Akinobu Teramoto, Masaki Hirayama, Atsutoshi Inokuchi, Azumi Itoh, Tetsuya Goto, Seiji Yasuda
Publikováno v:
Japanese Journal of Applied Physics. 47:2515-2520
Low-dielectric-constant (k
Publikováno v:
Japanese Journal of Applied Physics. 47:2668-2671
This work demonstrates the performance comparison of ultrathin fully depleted (FD) silicon on insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) with various structures. The current drivability and immunity to the short
Autor:
Shigetoshi Sugawa, Hiroaki Tanaka, Tatsunori Isogai, Tadahiro Ohmi, Tetsuya Goto, Akinobu Teramoto
Publikováno v:
Japanese Journal of Applied Physics. 47:3138-3141
As the candidate for the low Schottky barrier material for n-type silicon, physical and electrical properties of yttrium and its silicide were investigated. In order to prevent both Si surface and easily-oxidized low work function metals from being o
Autor:
Kohei Watanuki, Hirokazu Asahara, Atsutoshi Inokuchi, Tadahiro Ohmi, Masaki Hirayama, Akinobu Teramoto
Publikováno v:
Japanese Journal of Applied Physics. 47:2994-2998
The radical reaction based semiconductor manufacturing has been applied to silicon device process. Such as SiO2 and Si3N4 can be formed at low temperatures of under 500–600 °C. In this study, we applied radical reaction based semiconductor manufac
Autor:
Genya Fujita, Tomoyuki Suwa, Hiroto Takahashi, Tadahiro Ohmi, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 46:2148-2152
The gate leakage current which influences the charge hold time of flash memories is characterized as very localized in tunnel oxide area. And the leakage current value is relatively low as the quantity of the current. In conventional test-element-gro
Autor:
Tadahiro Ohmi, Eiji Ikenaga, Takashi Aratani, Masaaki Higuchi, Takeo Hattori, Akinobu Teramoto, Tatsufumi Hamada, S. Shinagawa, Hiroshi Nohira, Shigetoshi Sugawa
Publikováno v:
Japanese Journal of Applied Physics. 46:1895-1898
High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the in
Publikováno v:
Japanese Journal of Applied Physics. 46:2054-2057
Evaluating the statistical variation of the metal–oxide–semiconductor field-effect transistors (MOSFETs) is important for realizing the accurate analog circuits and highly large-scale-integration (LSI) devices. In this paper, a new evaluation met
Publikováno v:
Japanese Journal of Applied Physics. 46:2205-2210
Sr2(Ta1-x,Nbx)2O7 (perovskite STN; x=0.3) is one of the most practical candidates for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. However, in the application to metal–ferroelectric–insulator–Si fi
Publikováno v:
Japanese Journal of Applied Physics. 46:1848-1852
Low leakage current and low resistivity p+n diodes on Si(110) were formed by low temperature annealing at around 550 °C. Ga+ and B+ dual (Ga+/B+) ion implantation on Si(110) followed by low temperature annealing was studied. We demonstrated that Ga+