Zobrazeno 81 - 90
of 740
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
Martin Black and enhanced Martin Black samples were heated above 620 K and also cooled to 77 K while the directional reflectance and emittance were measured in the spectral region of 1.35 to 26 micrometer. Little emittance variation was found for bot
Publikováno v:
SPIE Proceedings.
The germanium (Ge) films of nanostructures deposited at 300 and 77 K by the cluster-beam evaporation technique are found to consist of small nanostructures. The crystal structure of the films is not the ordinary diamond but tetragonal structure. The
Publikováno v:
Novel In-Plane Semiconductor Lasers XX.
Step-taper active-region (STA) quantum cascade lasers (QCLs) allow for both carrier-leakage suppression and fast, miniband-like lower-laser (ll) level depopulation. That has led to an internal-efficiency value of ~ 77 % for ~ 5 μmemitting devices, a
Publikováno v:
Oxide-based Materials and Devices XII.
Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allo
Publikováno v:
Medical Imaging 2021: Physics of Medical Imaging.
Medical images can vary due to differences in imaging equipment and conditions. This variability negatively can impact the consistency and accuracy of diagnostic processes. Hence, it is critical to decrease the variability in image acquisition to ach
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Publikováno v:
SPIE Proceedings.
The surface resistance, Rs, at microwave frequencies has been an important qualification parameter for high temperature superconductor (HTS) thin films. HTS thin films with low Rs have been realized on many substrates, and many groups have realized R
Autor:
Georgy G. Zegrya, Maya P. Mikhailova, Ivan N. Timchenko, Yury P. Yakovlev, Konstantin D. Moiseev, I. A. Andreev
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were obse
Autor:
Kazuhiro Endo
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
Bi-Sr-Ca-Cu-O superconducting films consisting of 2223-high T c single phase have been prepared on LaAlO 3 (100) and Nd:YAlO 3 (001) substrates without post-annealing by MOCVD. As-deposited films exhibited the highest Tc(zero) of 97 K and the highest