Zobrazeno 71 - 80
of 740
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial l
Publikováno v:
SPIE Proceedings.
In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular b
Publikováno v:
SPIE Proceedings.
A 15-period GaAs/Al 0.3 Ga 0.7 As superlattice infrared photodetector (SLIP) is presented. A 1500 Angstrom wide Al 0.22 Ga 0.78 As blocking barrier is introduced to reduce the dark current. The measured noise power spectral density of dark current at
Autor:
Rolf Sauer, Milan Jaros, Klaus Thonke, Johannes Konle, Markus Hepp, Horst Kibbel, Wolfgang A. Cabanski, Hartmut Presting
Publikováno v:
SPIE Proceedings.
Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures have been grown by molecular beam epitaxy (MBE) on Si substrates for mid-infrared (3(mu) - 5(mu) ; 8(mu) - 12(mu) ) detection. These detectors operate at 77 K and are bas
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low
Autor:
Young Hun Kim, Young-Taek Song, In Jae Kim, K.N Oh, Suk-Kyoung Hong, Dong-Yun Shin, Il-Soo Choi, Jeong-Chil Shim, Sie-Wook Jeon, Eunsung Kim, Yun Chul Chung, S. H. Kim, Jinki Hong, Mann-Jang Park, Kihyun Kim
Publikováno v:
SPIE Proceedings.
In order to investigate the surface states of electron which can tunnel through the sufficiently thin insulator, the electron tunneling spectroscopy is used to measure the tunneling current in function of the bias voltage, and directly to get the sub
Autor:
Zion Aranda, Charles Harrity, Jesse Semmel, Andrew Wright, Daniel G. Mackrides, Shouyuan Shi, Mathew R. Konkol, Anna Bortle
Publikováno v:
Unmanned Systems Technology XXIII.
In this work a novel approach to collision avoidance radar is presented. Leveraging the chipsets currently in development for the automotive industry, with an operational band of 77 to 81 GHz a new frontend has been developed using a distributed freq
Autor:
Masayuki Nogami, Yoshihiro Abe
Publikováno v:
SPIE Proceedings.
Sm2+-doped glasses in the system of Al2O3-SiO2 were prepared by the sol-gel processing of metal alkoxides and the reaction with H2 gas at 800 degrees Celsius, of which hole burning properties were investigated. Sm3+ ions-containing glasses prepared b
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up