Zobrazeno 61 - 70
of 740
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples areprepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er- 20 luminescent center
Pseudo-planar Ge-on-Si single photon avalanche diode detector with record low noise-equivalent power
Autor:
Ross W. Millar, Bhavana Benakaprasad, Jaroslaw Kirdoda, Conor Coughlan, Fiona Thorburn, Gerald S. Buller, Xin Yi, Laura L. Huddleston, Scott Watson, Zoe M. Greener, Douglas J. Paul
Publikováno v:
Quantum Technology: Driving Commercialisation of an Enabling Science II.
Single-photon avalanche diode (SPAD) detectors are of significant interest for numerous applications, including light detection and ranging (LIDAR), and quantum technologies such as quantum-key distribution and quantum information processing. Here we
Publikováno v:
Materials for Infrared Detectors.
The epitaxial growth of Hg1-xCdxTe in the composition range 0.40 < x < 0.17 has been carried out on 3-inch CdTe/Si substrates mounted on indium-free molybdenum substrate holders. Because this mounting configuration prevents the effective use of a dir
Autor:
C. Buiculescu, Dan Vasilache, George Deligiorgis, Alexandru Mueller, George Konstantinidis, M. Lagadas, Ioana Petrini, V. Avramescu, Pierre Blondy, Dan Neculoiu, Sergiu Iordanescu
Publikováno v:
MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication.
This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrate. For the first time, a 2.2 micrometers thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semiinsulating GaAs
Autor:
Manijeh Razeghi
Publikováno v:
Photodetectors: Materials and Devices VI.
We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemica
Autor:
M.A. Remennyi, Georgii N. Talalakin, Nikolai M. Stus, S. A. Karandashev, B. A. Matveev, Meyrhan Aydaraliev, Nonna V. Zotova
Publikováno v:
SPIE Proceedings.
Multimode pulse (P equals 1.56 W, I equals 9.5 A) and CW (P equals 160 mW, I equals 1 A) operation is reported at 77 K for the broad (w equals 200 micrometer) contact InGaAsSb(Gd)/InAsSbP diode lasers with (lambda) equals 3.0 divided by 3.3 micromete
Autor:
Percival O. Buenaventura, Peter F. Ferson, James D. Luketich, Neil A. Christie, Virginia R. Litle, Hiran C. Fernando
Publikováno v:
SPIE Proceedings.
We have performed 800 photodynamic therapy (PDT) treatments in over 300 patients at the University of Pittsburgh since 1996. Over 150 patients have undergone PDT for palliation of dysphagia for esophageal cancer. Of the first 77 dysphagia improved in
Autor:
R.J. Menna, M. J. Yang, A.R. Sugg, Donna W. Stokes, Linda J. Olafsen, William W. Bewley, Edward H. Aifer, Gregory H. Olsen, Ramon U. Martinelli, M. Maiorov, Jerry R. Meyer, John C. Connolly, Hao Lee, Christopher L. Felix, I. Vurgaftman, Dmitri Z. Garbuzov
Publikováno v:
SPIE Proceedings.
Recent progress towards the realization of high-power, non- cryogenic (quasi-)cw mid-IR lasers based on the `W' configuration of the active region is reported. Type-II diodes with AlGaAsSb broadened-waveguide separate confinement regions are the firs
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim
Publikováno v:
SPIE Proceedings.
In present work are received high efficient and firm extruded material on the base of Bi0.85Sb0.15 solid solutions is obtained for low temperature coolers. Thermo and magnetothermoelectric figures of merit of developing material are sufficiently high