Zobrazeno 51 - 60
of 740
pro vyhledávání: '"77"'
Autor:
Eric A. DeCuir, Omar Manasreh, Euclydes Marega, Gregory J. Salamo, Jiang Wu, Vasyl P. Kunets, Petr M. Lytvyn, B. S. Passmore
Publikováno v:
SPIE Proceedings.
Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular
Autor:
Diana L. Huffaker, M. N. Kutty, A. Jallipalli, Ganesh Balakrishnan, S. H. Huang, L. R. Dawson
Publikováno v:
SPIE Proceedings.
We present a 1.54 μm, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5° substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pu
Publikováno v:
SPIE Proceedings.
The dynamics and pathways of relaxation processes in meso-ortho-nitrophenyl substituted octaethylporphyrins OEP-Ph(o-NO 2 ) and PdOEP-Ph(o-NO 2 ) occurring with the participation of the S 1 and T 1 states was studied in polar (dimethylformamide) and
Publikováno v:
SPIE Proceedings.
Quantum dot infrared photodetectors (QDIPs) have recently emerged as promising candidates for detection in the middle wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges. This is due to the QDIPs' absorption of normally incident lig
Autor:
Mikhail S. Nikitin
Publikováno v:
Detectors and Associated Signal Processing II.
Narrow-gap low-doped n-Hg 1-x Cd x Te (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n 77 ≈(1-10)×10 14 cm -3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing lay
Autor:
Bijan Movaghar, Ho Chul Lim, John Szafraniec, Wei Zhang, Manijeh Razeghi, Maho Taguchi, S. Tsao
Publikováno v:
SPIE Proceedings.
Here we report the first demonstrations of infrared focal plane array (FPA) based on GaAs and InP based quantum dot infrared photodetectors (QDIPs). QDIPs are extension of quantum well infrared photodetectors (QWIPs) and are predicted to outperform Q
Autor:
Christophe Laporte, Gilles Dambrine, Michel Maignan, Nourr Eddine Bourzgui, S. Delcourt, Jean-philippe Fraysse, Francois Danneville
Publikováno v:
SPIE Proceedings.
The main objectives of this work concerns the on-wafer high frequency noise measurements of low noise transistors (GaAs and InP HEMTs) at cryogenic temperature. We propose a new approach to de-embed the measured noise figure or noise power by taking
Publikováno v:
Smart Structures, Devices, and Systems.
The 77 GHz band has been reserved for intelligent cruise control in luxury cars and some public transport services in America and the United Kingdom. The Rotman lens offers a cheap and compact means to extend the single beam systems generally used, t
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Publikováno v:
SPIE Proceedings.
Terahertz Bloch oscillator based on GaAs-GaAlAs superlattice with weak barriers is proposed. Here due to interminiband tunneling current is a rising function of electric field while the tunneling and the Bloch oscillations produce dynamic negative di