Zobrazeno 101 - 110
of 740
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
Spectrally-resolved pico- and nanosecond fluorescence kinetics of photosystem II reaction center (RC) preparations and RC together with CP47 proximal antenna have been studied at room temperature and at 77 K. The following conclusions have been made.
Autor:
V. E. Kholmogorov
Publikováno v:
Optical Methods of Biomedical Diagnostics and Therapy.
summary spectra of WI—illuminated blood components in composite signals and studyof their features give a ground for understanding of the nature of (JV-'induced PCthat in its turn is necessary for investigation of molecular mechanism of blood photo
Autor:
Gi-Ming Shiue, Chia Ho, Chung-Chi Chang, Chun-hui Tsai, Ho-Ching Chien, Yu-Wen Chen, Tien-Ming Chuang, Han-Yu Chang, Feng-Yuh Juang, Mon-Shen Chen, Chung-Ren Lao, Gwo-Ji Horng
Publikováno v:
SPIE Proceedings.
A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR
Publikováno v:
High-Speed Electronics and Optoelectronics.
GaSh-based meta1semiconductor-meta1 (MSM) and pi-n photodetectors grown by molecular beam epitaxy have been demonstrated for the first time. These novel devices can offer higher bandwidths and lower excess noise because of the superior hole transport
Autor:
Ben Gable, Arthur D. van Rheenen, Theodore T. Weber, Leon L. Jostad, Joo-Young Kim, John H. Goebel
Publikováno v:
SPIE Proceedings.
The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the l
Autor:
Steven M. Baier, Jim Nohava, B. Grung, A. Fraasch-Vold, Richard G. Schulze, J.J. Stronczer, D.E. Grider
Publikováno v:
SPIE Proceedings.
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgapengineering techniques are described which provide complementaiy p-channel and n-channel GaAs FETs attractive forperforming advanced signa
Publikováno v:
SPIE Proceedings.
Resonance-fluorescence-line-narrowing studies have been performed on a representative group of Er3+ -doped glasses for excitation in both the 1530 and 980-nm bands at 4.2, 77, 200, and 300 K. Fluorozirconate, fluorophosphate, phosphate, silicate, Ge/
Autor:
Laura Newburgh, Kabelo C. Kesebonye, Kavilan Moodley, Jonathan Sievers, Neeraj Gupta, Tzu-Ching Chang, Viraj Nistane, Moumita Aich, Jean-Paul Kneib, Corrie Ungerer, Austin A. Gumba, Benjamin Saliwanchik, Emily Kuhn, Kevin Bandura, Alexandre Refregier, D. Crichton, Dallas Wulf, Maile Harris, Martin Kunz, Aaron Ewall-Wice, Jeffrey B. Peterson, Deniz Ölçek, Warren Naidoo, Jacques van Dyk, Amanda Weltman, Alireza Vafaei Sadr, H. Cynthia Chiang
Publikováno v:
Ground-based and Airborne Telescopes VIII.
This paper describes the design, implementation, and verification of a test-bed for determining the noise temperature of radio antennas operating between 400-800 MHz. The requirements for this test-bed were driven by the HIRAX experiment, which uses
Publikováno v:
International Conference on Thin Film Physics and Applications.
The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state ava
Publikováno v:
International Conference on Thin Film Physics and Applications.
We have performed millimeter-wave frequency (94 GHz) measurements on high quality YBa 2 Cu 3 O 7-x superconducting films on yttrium stabilized (100) ZrO 2 , MgO substrates. The 0.2 micrometers thin films fabricated by the magnetron sputtering in- sit