Zobrazeno 1 - 10
of 34
pro vyhledávání: '"77"'
Publikováno v:
Optoelectronic Devices and Integration VIII.
Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the e
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Autor:
Diana L. Huffaker, M. N. Kutty, A. Jallipalli, Ganesh Balakrishnan, S. H. Huang, L. R. Dawson
Publikováno v:
SPIE Proceedings.
We present a 1.54 μm, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5° substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pu
Publikováno v:
Materials for Infrared Detectors.
The epitaxial growth of Hg1-xCdxTe in the composition range 0.40 < x < 0.17 has been carried out on 3-inch CdTe/Si substrates mounted on indium-free molybdenum substrate holders. Because this mounting configuration prevents the effective use of a dir
Autor:
C. Buiculescu, Dan Vasilache, George Deligiorgis, Alexandru Mueller, George Konstantinidis, M. Lagadas, Ioana Petrini, V. Avramescu, Pierre Blondy, Dan Neculoiu, Sergiu Iordanescu
Publikováno v:
MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication.
This paper presents the fabrication processes for micromachined millimeter wave devices on micromachined GaAs substrate. For the first time, a 2.2 micrometers thin GaAs/AlGaAs membrane, obtained by MBE growth and micromachining of semiinsulating GaAs
Publikováno v:
Infrared Technology and Applications XLII.
We present an approach to realize antimonide based superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN based superlattice detectors are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer
Publikováno v:
Infrared Technology and Applications XLII.
We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10
Publikováno v:
SPIE Proceedings.
We reported the influence of free-standing (FS) GaN substrate on ultraviolet light-emitting-diodes (UV LEDs) by atmospheric-pressure metal-organic chemical vapor deposition (APMOCVD). The Raman spectrum shows the in-plane compressive stress of the Ga
Autor:
A. L. Zakgeim, A. E. Cherniakov, A. A. Usikova, N. M. Stus, N. D. Il’inskaya, B. A. Matveev, M. A. Remennyy, S. A. Karandashev, Yu. M. Zadiranov
Publikováno v:
Photonic and Phononic Crystal Materials and Devices X.
We present L-I, I-V and spectral characteristics at 300 and 77 K of the flip-chip LED arrays based on p-InAsSbP/n- InGaAsSb heterostrucutres with photonic crystal formed onto an outcoupling n + -InAs substrate. We also describe results on IR imaging
Autor:
Isabelle Ribet-Mohamed, Philippe Christol, H. Ait-Kaci, K. Jaworowicz, Sylvie Contreras, C. Cervera, R. Chaghi, Jean-Baptiste Rodriguez, Leszek Konczewicz
Publikováno v:
SPIE Proceedings.
Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8 InAs monolayers (MLs)