Zobrazeno 1 - 10
of 44
pro vyhledávání: '"77"'
Autor:
Sergey I. Tarapov, Ilary M. Rarenko, Igor Ivanchenko, Nikolai N. Beletskii, I. N. Gorbatyuk, Nina Popenko, Alexey A. Vertiy
Publikováno v:
SPIE Proceedings.
Excitation of surface magnetoplasma waves in the CdHg1Te semiconductors has been effected by the method of disturbed total internal reflection following the Otto scheme at the wavelength of 2 mm, in the temperature range 0.3 KT
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface da
Autor:
Fiodor F. Sizov, S. A. Dvoretsky, V. V. Vasiliev, Joanna V. Gumenjuk-Sichevska, N. N. Mikhailov, Yu. E. Kamenev
Publikováno v:
SPIE Proceedings.
Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and thei
Publikováno v:
SPIE Proceedings.
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples areprepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er- 20 luminescent center
Publikováno v:
High-Speed Electronics and Optoelectronics.
GaSh-based meta1semiconductor-meta1 (MSM) and pi-n photodetectors grown by molecular beam epitaxy have been demonstrated for the first time. These novel devices can offer higher bandwidths and lower excess noise because of the superior hole transport
Publikováno v:
SPIE Proceedings.
Thiogallate compounds represented by general formula MGa 2 S 4 [where M- Ca +2 , Ba +2 , Sr +2 , Pb +2 , Eu +2 , Eu +3 , ( Na +1 La +3 ) and ( Na +1 Ce +3 )] are highly effective electro-luminescence and laser materials. These materials were first sy
Autor:
Philip Klipstein, N. Rappaport, Eliezer Weiss, A. Glozman, Itay Shtrichman, Olga Klin, Inna Lukomsky, E. Hojman, Rami Fraenkel, Lidia Langof, A. Tuito, Y. Benny, E. Avnon, L. Krasovitsky, Michal Nitzani, D. Azulai, N. Snapi
Publikováno v:
Infrared Technology and Applications XLII.
SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum effic
Autor:
Shinya Fukushima, Hideharu Matsuura, Shohei Ishikawa, Shungo Sakurai, Akinobu Takeshita, Atsuki Hidaka
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII.
One of the authors has proposed a simple-structure silicon X-ray detector (gated silicon drift detector: GSDD), whose structure is much simpler than commercial silicon drift detectors (SDDs). SDDs contain multiple built-in metal-oxide-semiconductor f
Autor:
Hooman Mohseni, Iman Hassani Nia
Publikováno v:
SPIE Proceedings.
Suspended semiconductor structures with high thermal isolation provide high temperature sensitivity of the dissipated thermal power. Therefore they can be used to obtain essential information about the underlying mechanisms of anti-Stokes laser cooli
Autor:
James Kolodzey, Jay Gupta
Publikováno v:
SPIE Proceedings.
Terahertz emitters are important for fundamental studies in an interesting frequency regime and for applications ranging from medical diagnostics to see-through imaging. A simple approach to THz emission from semiconductors is based on intracenter op