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Publikováno v:
SPIE Proceedings.
Accurate and reliable numerical simulation tools are necessary for the development of advanced semiconductor devices. InSb is using the MATLAB and TCAD simulation tool to calculatet the InSb body bandstructure, blackbody's radiant emittance and simul
Autor:
Frederick W. Clarke
Publikováno v:
Specification, Production, and Testing of Optical Components and Systems.
An optical method for measuring carrier concentration and mobility in n-type semiconductors is presented. The method depends on an accurate knowledge of the free electron effective mass,(M), as a function of temperature and dopant concentration. Thes
Autor:
Frederick W. Clarke
Publikováno v:
SPIE Proceedings.
A nondestructive characterization technique to determine free carrier concentration and mobility that is applicable to most n-type semiconductors, including infrared detector materials such as InSb and HgCdTe, is presented. The technique utilizes abs