Zobrazeno 1 - 10
of 42
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Autor:
Aboozar Mosleh, Thach Pham, Hameed A. Naseem, Baohua Li, Wei Du, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard A. Soref, Shui-Qing Yu, Joe Margetis
Publikováno v:
SPIE Proceedings.
Si based Ge1-xSnx photoconductors, with Sn incorporation of 0.9, 3.2, and 7%, were fabricated using a CMOS-compatible process. Temperature dependent study was conducted from 300 to 77 K. The first generation device (standard photoconductor, PD) shows
Autor:
James McCurdy, Chris Kamilar, Pradip Mitra, M. R. Skokan, Richard Scritchfield, Xiaoli Sun, Terry Welch, Jeffrey D. Beck, Kirk Reiff, James B. Abshire
Publikováno v:
SPIE Proceedings.
A 16 element HgCdTe e-APD detector has been developed for lidar receivers that has significant improvements in sensitivity in the spectral range from < 1μm to 4 μm. A demonstration detector consisting of a 4x4 APD detector array, with 80 μm square
Autor:
Tunay Tansel, Atilla Aydinli, Coskun Kocabas, Omer Salihoglu, Kutlu Kutluer, Rasit Turan, Abdullah Muti
Publikováno v:
SPIE Proceedings.
We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperat
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Publikováno v:
SPIE Proceedings.
Quantum dot infrared photodetectors (QDIPs) have recently emerged as promising candidates for detection in the middle wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges. This is due to the QDIPs' absorption of normally incident lig
Autor:
Bijan Movaghar, Ho Chul Lim, John Szafraniec, Wei Zhang, Manijeh Razeghi, Maho Taguchi, S. Tsao
Publikováno v:
SPIE Proceedings.
Here we report the first demonstrations of infrared focal plane array (FPA) based on GaAs and InP based quantum dot infrared photodetectors (QDIPs). QDIPs are extension of quantum well infrared photodetectors (QWIPs) and are predicted to outperform Q
Autor:
Manijeh Razeghi
Publikováno v:
Photodetectors: Materials and Devices VI.
We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemica
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim