Zobrazeno 21 - 30
of 42
pro vyhledávání: '"77"'
Autor:
Ha Sul Kim, Elena Plis, Arezou Khoshakhlagh, S. Krishna, Stephen Myers, S. J. Lee, Nutan Gautam, L. R. Dawson, Sam Kyu Noh
Publikováno v:
SPIE Proceedings.
The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs for the long wave infrared (LWIR) spectral region are discussed. First, SL growth optimization for LWIR region is explained, then the structures based on LWIR n
Autor:
Alice Hospodková, N. D. Stoyanov, I. A. Andreev, Konstantin D. Moiseev, E. Hulicius, Maya P. Mikhailova, Evgenii Ivanov, Yu. P. Yakovlev, K. Melichar, Jiří Pangrác, T. Šimeček
Publikováno v:
SPIE Proceedings.
Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructure with a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing the single QW were grown b
Autor:
Yagya D. Sharma, R. Dennis, D. Burrows, Sanjay Krishna, G. Bishop, Ha Sul Kim, Mani Sundaram, Arezou Khoshakhlagh, Jean-Baptiste Rodriguez, R. Cook, L. R. Dawson, Elena Plis, J. Bundas, Axel Reisinger, K. Patnaude
Publikováno v:
SPIE Proceedings.
The development of type-II InAs/(In,Ga)Sb superlattice (SL) detectors with nBn design for single-color and dual-color operation in MWIR and LWIR spectral regions are discussed. First, a 320 x 256 focal plane array (FPA) with cutoff wavelength of 4.2
Autor:
E. R. Blazejewski, D. Z. Ting, Sir B. Rafol, Sarath D. Gunapala, C. A. Shott, John K. Liu, Yun-Chorng Chang, Sanjay Krishna, Sam A. Keo, Cory J. Hill, Sumith V. Bandara, Jason M. Mumolo
Publikováno v:
SPIE Proceedings.
Epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared (LWIR) focal plane arrays (FPAs). The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb
Autor:
John K. Liu, Sir B. Rafol, Sumith V. Bandara, E. R. Blazejewski, Sam A. Keo, Sanjay Krishna, Sarath D. Gunapala, C. A. Shott, Jason M. Mumolo, D. Z. Ting, Cory J. Hill, Yia-Chung Chang
Publikováno v:
SPIE Proceedings.
We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIP
Autor:
Susanne Almqvist, Anders Mikkelsen, Hedda Malm, Håkan Pettersson, Carl Asplund, Edvin Lundgren, Per-Olof Holtz, Jan Y. Andersson, Linda Höglund, E. Petrini, Qin Wang, Jan Borglind, Sergiy Smuk, Lassana Ouattara
Publikováno v:
SPIE Proceedings.
We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In0.15Ga0.85As/GaAs QD layers embedded between n-doped contact layers. The density of t
Autor:
Sam A. Keo, Sarath D. Gunapala, D. Z. Ting, Sumith V. Bandara, Jason M. Mumolo, C. A. Shott, Yun-Chorng Chang, Sanjay Krishna, John K. Liu, Cory J. Hill, Sir B. Rafol, E. R. Blazejewski
Publikováno v:
SPIE Proceedings.
We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIP
Autor:
E. R. Blazejewski, Sumith V. Bandara, Sir B. Rafol, Cory J. Hill, Sanjay Krishna, John K. Liu, Sam A. Keo, Sarath D. Gunapala, David Z. Ting, Y. C. Chang, Jason M. Mumolo, C. A. Shott
Publikováno v:
SPIE Proceedings.
We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form s
Publikováno v:
SPIE Proceedings.
We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detec
Publikováno v:
SPIE Proceedings.
InAs quantum dot infrared photodetectors based on bound-to- bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers . At 77 K