Zobrazeno 11 - 20
of 42
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular b
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR
Autor:
Arash Dehzangi, Manijeh Razeghi, Sourav Adhikary, A. M. Hoang, Abbas Haddadi, Romain Chevallier
Publikováno v:
Infrared Technology and Applications XLII.
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of
Publikováno v:
SPIE Proceedings.
The barrier enhanced InAs/GaSb long wavelength photodetectors were designed and demonstrated in this paper. A PBIN detector with an electron barrier inserted between P type contactor and absorption region show significantly improved electrical perfor
Autor:
Antoni Rogalski, Piotr Martyniuk
Publikováno v:
SPIE Proceedings.
InAsSb ternary alloy is potentially capable of operating at the longest cut-off wavelength (about 9 μm at 77 K) in the entire III-V family. Recently, there has been a considerable progress in development of the InAsSb focal plane arrays. The high op
Autor:
A. Torres-Jacome, Salvador Ventura-Gonzalez, Carlos G. Treviño-Palacios, F. J. De la Hidalga-Wade, R. Delgado-Macuil, Daniel Ferrusca, Abdu Orduña-Diaz, M. Rojas-López
Publikováno v:
SPIE Proceedings.
We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride (Si 3 N 4 ) layer. Wet bulk m
Autor:
Edward P. Smith, Sanjay Krishna, Scott M. Johnson, Nutan Gautam, S. Krishna, Elena Plis, Stephen Myers
Publikováno v:
SPIE Proceedings.
We report on dual-band (mid-/long-wave infrared) InAs/GaSb strained layer superlattice detector with nBn and pBp architectures. Two band response was registered with 50% cut-off wavelengths of 5μm (both nBn and pBp detectors) and 9μm (nBn)/10μm (p
Autor:
V. Dobrovolsky, N. Michailov, Fiodor F. Sizov, S. Dvoretskii, V. Zabudsky, N. Momot, Z. Tsybrii
Publikováno v:
SPIE Proceedings.
Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg 1-x Cd x Te semiconductor bolometers that can be used as picture elements in THz sensitive arrays, are considered. The response of Hg 1-x Cd x Te warm-electron bolometers was measured
Autor:
Elena Plis, Arezou Khoshakhlagh, Stephen Myers, M. N. Kutty, Brianna Klein, Scott M. Johnson, David R. Rhiger, Sanjay Krishna, Ha Sul Kim, Nutan Gautam, Edward P. Smith
Publikováno v:
SPIE Proceedings.
The development of InAsSb detectors based on the nBn design for the mid-wave infrared (MWIR) spectral region is discussed. Comparisons of optical and electrical properties of InAsSb photodetectors with two different barrier material, namely, AlAs 0.1
Autor:
Antoni Rogalski, Jozef Piotrowski
The first results on photoconductivity in Hg1-xCdxTe were reported by Lawson et al. in 1959. Ten years later, in 1969, Bartlett et al. reported background limited performance of photoconductors operated at 77 K in the 8â14-I¼m LWIR spectral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4a5619760332d1d84b41566de7df2e
https://doi.org/10.1117/3.717228.ch5
https://doi.org/10.1117/3.717228.ch5