Zobrazeno 1 - 10
of 62
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technolo
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Publikováno v:
Optical Components and Materials XVIII.
In the pursuit of new mid-IR laser gain materials, dysprosium-doped barium fluoride was evaluated for its potential laser emission in the 3-μm spectral region. Comprehensive spectroscopic characterization was performed, including absorption, fluores
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface da
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
Tunay Tansel, Atilla Aydinli, Coskun Kocabas, Omer Salihoglu, Kutlu Kutluer, Rasit Turan, Abdullah Muti
Publikováno v:
SPIE Proceedings.
We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperat
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Autor:
M.A. Remennyi, Georgii N. Talalakin, Nikolai M. Stus, S. A. Karandashev, B. A. Matveev, Meyrhan Aydaraliev, Nonna V. Zotova
Publikováno v:
SPIE Proceedings.
Multimode pulse (P equals 1.56 W, I equals 9.5 A) and CW (P equals 160 mW, I equals 1 A) operation is reported at 77 K for the broad (w equals 200 micrometer) contact InGaAsSb(Gd)/InAsSbP diode lasers with (lambda) equals 3.0 divided by 3.3 micromete
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up