Zobrazeno 1 - 9
of 9
pro vyhledávání: '"77"'
Autor:
Edward P. Smith, Sanjay Krishna, Scott M. Johnson, Nutan Gautam, S. Krishna, Elena Plis, Stephen Myers
Publikováno v:
SPIE Proceedings.
We report on dual-band (mid-/long-wave infrared) InAs/GaSb strained layer superlattice detector with nBn and pBp architectures. Two band response was registered with 50% cut-off wavelengths of 5μm (both nBn and pBp detectors) and 9μm (nBn)/10μm (p
Autor:
Sanjay Krishna, Jun Oh Kim, Thomas J. Rotter, Saumya Sengupta, Ajit V. Barve, John Montoya, Yagya D. Sharma
Publikováno v:
SPIE Proceedings.
Systematic characterization of various types of intersubband transitions in the quantum dots in a well (DWELL) infrared photodetectors has been presented. By changing the thickness of the quantum well, the excited state energy can be tuned with respe
Publikováno v:
SPIE Proceedings.
In the past few years, significant progress has been made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photodetectors. Type-II superlattice demonstrated its ability to perform imaging in the middle and long infra-r
Autor:
John K. Liu, Sir B. Rafol, Sumith V. Bandara, E. R. Blazejewski, Sam A. Keo, Sanjay Krishna, Sarath D. Gunapala, C. A. Shott, Jason M. Mumolo, D. Z. Ting, Cory J. Hill, Yia-Chung Chang
Publikováno v:
SPIE Proceedings.
We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIP
Autor:
Sam A. Keo, Sarath D. Gunapala, D. Z. Ting, Sumith V. Bandara, Jason M. Mumolo, C. A. Shott, Yun-Chorng Chang, Sanjay Krishna, John K. Liu, Cory J. Hill, Sir B. Rafol, E. R. Blazejewski
Publikováno v:
SPIE Proceedings.
We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIP
Autor:
E. R. Blazejewski, Sumith V. Bandara, Sir B. Rafol, Cory J. Hill, Sanjay Krishna, John K. Liu, Sam A. Keo, Sarath D. Gunapala, David Z. Ting, Y. C. Chang, Jason M. Mumolo, C. A. Shott
Publikováno v:
SPIE Proceedings.
We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form s
Publikováno v:
SPIE Proceedings.
We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detec
Autor:
Antoni Rogalski, Robert Ciupa
Publikováno v:
SPIE Proceedings.
Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared detectors are presented. Two types of QWIPs are considered: GaAs/A1GaAs intersubband quantum well photoconductors a
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
Using 45 degree(s) geometry or grating for optical coupling, three kinds of GaAs/AlxGa1-xAs multiquantum well (MQW) photodetectors having different response range, i.e., 7.50 - 8.85, 8.20 - 9.80, and 9.60 - 11.40 micrometers , have been fabricated an