Zobrazeno 1 - 10
of 47
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensiti
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Publikováno v:
SPIE Proceedings.
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Publikováno v:
SPIE Proceedings.
Time-resolved photoluminescence (TRPL) is used to study the minority carrier lifetime in type-II superlattice (T2SL) infrared detector materials to investigate the recombination mechanisms, trap states and transport properties that currently limit th
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
Sam A. Keo, Sarath D. Gunapala, Arezou Khoshakhlagh, David Z. Ting, Alexander Soibel, Cory J. Hill, Linda Höglund
Publikováno v:
SPIE Proceedings.
In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the
Autor:
Eric A. DeCuir, Omar Manasreh, Euclydes Marega, Gregory J. Salamo, Jiang Wu, Vasyl P. Kunets, Petr M. Lytvyn, B. S. Passmore
Publikováno v:
SPIE Proceedings.
Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular
Publikováno v:
SPIE Proceedings.
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples areprepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er- 20 luminescent center
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low