Zobrazeno 1 - 10
of 11
pro vyhledávání: '"77"'
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Publikováno v:
SPIE Proceedings.
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature
Publikováno v:
SPIE Proceedings.
Time-resolved photoluminescence (TRPL) is used to study the minority carrier lifetime in type-II superlattice (T2SL) infrared detector materials to investigate the recombination mechanisms, trap states and transport properties that currently limit th
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
Sam A. Keo, Sarath D. Gunapala, Arezou Khoshakhlagh, David Z. Ting, Alexander Soibel, Cory J. Hill, Linda Höglund
Publikováno v:
SPIE Proceedings.
In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications XIV.
InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb
Autor:
Thorvald Andersson
Publikováno v:
SPIE Proceedings.
Strained (InGa)As single and multiple quantum wells, embedded in GaAs and (AlGa)As, have been grown by molecular beam epitaxy. The critical thickness for (InGa)As/GaAs was studied by photoluminescence (PL) and found to follow the theoretical expressi
Publikováno v:
SPIE Proceedings.
Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime w
Publikováno v:
International Conference on Thin Film Physics and Applications.
ZnSe-ZnTe strained-layer superlattices were grown by atmospheric pressure MOCVD on transparent substrate CaF2(111) for the first time. With x-ray diffraction measurements, multi- order satellites were observed, which confirms the formation of the per
Publikováno v:
Quantum Well and Superlattice Physics III.
The stimulated emission spectra of photoexcited quantum-well structures were measured at room temperature, 77 and 1.8K as a function of the illuminated stripe length and excitation intensity. Three samples are examined: a multiple quantum well, and t