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pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensiti
Autor:
Sam A. Keo, Sarath D. Gunapala, Arezou Khoshakhlagh, David Z. Ting, Alexander Soibel, Cory J. Hill, Linda Höglund
Publikováno v:
SPIE Proceedings.
In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the
Photoluminescence of 2D electronic δ-layers in lateral non-homogeneous nano-structures based on GaAs
Publikováno v:
SPIE Proceedings.
Within the framework of previously proposed the spectral-correlative method investigation of the semiconductor structures with laterally nonuniform layers the photoluminescence (PL) of the structure on basis GaAs with n-type d-layers at 77 K is inves
Publikováno v:
SPIE Proceedings.
We have successfully observed room-temperature electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates. The InAs QDs were grown by droplet hetero-epitaxy using low-pressure organometallic vapor epitaxy (OMVPE). There were two ki
Publikováno v:
Quantum Well and Superlattice Physics III.
The stimulated emission spectra of photoexcited quantum-well structures were measured at room temperature, 77 and 1.8K as a function of the illuminated stripe length and excitation intensity. Three samples are examined: a multiple quantum well, and t