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pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Publikováno v:
Optoelectronic Devices and Integration VIII.
Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the e
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface da
Publikováno v:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices.
High sensitive Terahertz detection can be achieved by properly constructing Metal-Semiconductor-Metal (MSM) structure with semiconductor materials. In this study, Mercury-Cadmium-Telluride (MCT) film was used to fabricate MSM Terahertz detectors. The
Autor:
Salihoğlu, Ömer, Muti, Abdullah, Kutluer, K., Tansel, T., Turan, R., Kocabaş, Coşkun, Aydınlı, Atilla
Publikováno v:
Proceedings of SPIE
Conference name: SPIE Defense, Security, and Sensing, 2012 Date of Conference: 23-27 April 2012 We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3533::61e430095343babed8b6a6b1d970c441
https://hdl.handle.net/11693/28242
https://hdl.handle.net/11693/28242
Autor:
Jarrod Vaillancourt, Xuejun Lu
Publikováno v:
SPIE Proceedings.
We report a very longwave Infrared (> 14 μm) quantum dot photodetector working at 77 K. Very longwave infrared (VLWIR) detection at a cut-off wavelength of 15.3 μm was achieved through QD size engineering. Peak specific photodetectivity D* of 3.3x1
Publikováno v:
SPIE Proceedings.
Quantum dot infrared photodetectors (QDIPs) have recently emerged as promising candidates for detection in the middle wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges. This is due to the QDIPs' absorption of normally incident lig
Autor:
Bijan Movaghar, Ho Chul Lim, John Szafraniec, Wei Zhang, Manijeh Razeghi, Maho Taguchi, S. Tsao
Publikováno v:
SPIE Proceedings.
Here we report the first demonstrations of infrared focal plane array (FPA) based on GaAs and InP based quantum dot infrared photodetectors (QDIPs). QDIPs are extension of quantum well infrared photodetectors (QWIPs) and are predicted to outperform Q
Autor:
Manijeh Razeghi
Publikováno v:
Photodetectors: Materials and Devices VI.
We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemica