Zobrazeno 1 - 10
of 339
pro vyhledávání: '"77"'
Autor:
Philippe Tribolet, Alain Manissadjian, Xavier Marcadet, Philippe Bois, Eric Herniou, Eric Costard
Publikováno v:
Infrared Technology and Applications XXVII.
Standard GaAs/AlGaAs QWIPs are now well established for LWIR detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The realization of large FPAs (up to 640 X 480) drawing on the standard III-V
Publikováno v:
SPIE Proceedings.
A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technolo
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
3D numerical simulation of intracavity-contacted oxide-confined VCSELs operating at cryogenic temperatures is reported. Spatial profiles and 3D distributions of electrical potential, current and ture are calculated. The device geometry is found to ca
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Autor:
Valery Filippov, Andrei Fedotov, Vasilii Ustimchik, Regina Gumenyuk, Teppo Noronen, Yuri Chamorovskii, Joona Rissanen
Publikováno v:
Fiber Lasers XVII: Technology and Systems.
We present a single-mode narrow band linear-polarized picosecond green fiber source delivered up to 146.4 kW of peak power. The laser architecture is composed of frequency-doubled all-fiber MOPA system operating at 1064 nm. The commercially available
Autor:
Peter D. Dahlberg, Annina M. Sartor, W. E. Moerner, Saumya Saurabh, Jiarui Wang, Lucy Shapiro
Publikováno v:
Single Molecule Spectroscopy and Superresolution Imaging XIII.
Single-molecule superresolution methods enable imaging of specifically-labeled biological samples with structures on length scales below the diffraction limit of visible light. Imaging samples at cryogenic temperatures (77 K) significantly reduces ph
Publikováno v:
Optoelectronic Devices and Integration VIII.
Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the e
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface da