Zobrazeno 51 - 60
of 339
pro vyhledávání: '"77"'
Autor:
Hong-Cheng Li
Publikováno v:
SPIE Proceedings.
High temperature superconducting thin films of GdBa 2 Cu 3 O 7 (GBCO) were fabricated by de-magnetron sputtering on SrTiO 3 , Zr(Y)O 2 (YSZ), MgO and LaAlO 3 (LAO) single crystal substrates. The X-ray diffraction and TEM analysis showed the films wer
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasi
Autor:
Gi-Ming Shiue, Chia Ho, Chung-Chi Chang, Chun-hui Tsai, Ho-Ching Chien, Yu-Wen Chen, Tien-Ming Chuang, Han-Yu Chang, Feng-Yuh Juang, Mon-Shen Chen, Chung-Ren Lao, Gwo-Ji Horng
Publikováno v:
SPIE Proceedings.
A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR
Publikováno v:
High-Speed Electronics and Optoelectronics.
GaSh-based meta1semiconductor-meta1 (MSM) and pi-n photodetectors grown by molecular beam epitaxy have been demonstrated for the first time. These novel devices can offer higher bandwidths and lower excess noise because of the superior hole transport
Autor:
Ben Gable, Arthur D. van Rheenen, Theodore T. Weber, Leon L. Jostad, Joo-Young Kim, John H. Goebel
Publikováno v:
SPIE Proceedings.
The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the l
Autor:
Steven M. Baier, Jim Nohava, B. Grung, A. Fraasch-Vold, Richard G. Schulze, J.J. Stronczer, D.E. Grider
Publikováno v:
SPIE Proceedings.
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgapengineering techniques are described which provide complementaiy p-channel and n-channel GaAs FETs attractive forperforming advanced signa
Autor:
George V. Negrete, Robert B. Hammond
Publikováno v:
SPIE Proceedings.
Microwave data on epitaxial Tl2Ba2CaCu2O8 thin films grown on LaAlO3 substrates are reported. The authors fabricated and tested microstrip resonators using these films and performed measurements of the loss tangent of lanthanum aluminate substrates a
Autor:
David K. Fork, James B. Boyce, G.A. N. Connell, Theodore H. Geballe, David B. Fenner, Julia M. Phillips, Nathan Newman, A. Barrera
Publikováno v:
SPIE Proceedings.
Efforts to grow high quality films of YBCO on Si have been complicated by factors discussed in Ref. 1, chief among them being the reaction between YBCO and Si, which is damaging even at 550 C. This is well below the customary temperatures for YBCO fi
Publikováno v:
SPIE Proceedings.
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective m