Zobrazeno 41 - 50
of 339
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular b
Publikováno v:
SPIE Proceedings.
A 15-period GaAs/Al 0.3 Ga 0.7 As superlattice infrared photodetector (SLIP) is presented. A 1500 Angstrom wide Al 0.22 Ga 0.78 As blocking barrier is introduced to reduce the dark current. The measured noise power spectral density of dark current at
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up
Publikováno v:
SPIE Proceedings.
The germanium (Ge) films of nanostructures deposited at 300 and 77 K by the cluster-beam evaporation technique are found to consist of small nanostructures. The crystal structure of the films is not the ordinary diamond but tetragonal structure. The
Publikováno v:
Novel In-Plane Semiconductor Lasers XX.
Step-taper active-region (STA) quantum cascade lasers (QCLs) allow for both carrier-leakage suppression and fast, miniband-like lower-laser (ll) level depopulation. That has led to an internal-efficiency value of ~ 77 % for ~ 5 μmemitting devices, a
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Publikováno v:
SPIE Proceedings.
The surface resistance, Rs, at microwave frequencies has been an important qualification parameter for high temperature superconductor (HTS) thin films. HTS thin films with low Rs have been realized on many substrates, and many groups have realized R