Zobrazeno 11 - 20
of 339
pro vyhledávání: '"77"'
Autor:
Michal Němec, Michal Jelínek, V. V. Osiko, N. O. Kovalenko, Igor S. Terzin, Jan Šulc, Helena Jelínková, Maxim E. Doroshenko
Publikováno v:
SPIE Proceedings.
Fe2+:Cd1-xMnxTe solid solution spectroscopic and lasing properties depending on temperature and Mn concentration x were investigated. A set of Fe2+:Cd1-xMnxTe crystals with different concentration of Mn (x = 0.1, 0.52, 0.68, and 0.78) was synthesized
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Publikováno v:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices.
High sensitive Terahertz detection can be achieved by properly constructing Metal-Semiconductor-Metal (MSM) structure with semiconductor materials. In this study, Mercury-Cadmium-Telluride (MCT) film was used to fabricate MSM Terahertz detectors. The
Publikováno v:
SPIE Proceedings.
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Autor:
Aboozar Mosleh, Thach Pham, Hameed A. Naseem, Baohua Li, Wei Du, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard A. Soref, Shui-Qing Yu, Joe Margetis
Publikováno v:
SPIE Proceedings.
Si based Ge1-xSnx photoconductors, with Sn incorporation of 0.9, 3.2, and 7%, were fabricated using a CMOS-compatible process. Temperature dependent study was conducted from 300 to 77 K. The first generation device (standard photoconductor, PD) shows
Autor:
Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Publikováno v:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has
Publikováno v:
SPIE Proceedings.
The 1.6 μm emission properties originating from the 3 F 3 , 3 F 4 → 3 H 4 transition of Pr 3+ ions in Pr-doped PbCl 2 crystals were investigated for possible application in resonantly-pumped, eye-safe laser development. Pr: PbCl 2 was synthesized
Autor:
James McCurdy, Chris Kamilar, Pradip Mitra, M. R. Skokan, Richard Scritchfield, Xiaoli Sun, Terry Welch, Jeffrey D. Beck, Kirk Reiff, James B. Abshire
Publikováno v:
SPIE Proceedings.
A 16 element HgCdTe e-APD detector has been developed for lidar receivers that has significant improvements in sensitivity in the spectral range from < 1μm to 4 μm. A demonstration detector consisting of a 4x4 APD detector array, with 80 μm square
Autor:
Tunay Tansel, Atilla Aydinli, Coskun Kocabas, Omer Salihoglu, Kutlu Kutluer, Rasit Turan, Abdullah Muti
Publikováno v:
SPIE Proceedings.
We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperat