Zobrazeno 1 - 10
of 22
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Autor:
Mikhail S. Nikitin
Publikováno v:
Detectors and Associated Signal Processing II.
Narrow-gap low-doped n-Hg 1-x Cd x Te (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n 77 ≈(1-10)×10 14 cm -3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing lay
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up
Autor:
David K. Fork, James B. Boyce, G.A. N. Connell, Theodore H. Geballe, David B. Fenner, Julia M. Phillips, Nathan Newman, A. Barrera
Publikováno v:
SPIE Proceedings.
Efforts to grow high quality films of YBCO on Si have been complicated by factors discussed in Ref. 1, chief among them being the reaction between YBCO and Si, which is damaging even at 550 C. This is well below the customary temperatures for YBCO fi
Publikováno v:
Optical Interconnects XX.
Silicon (Si) photonics is well-positioned to provide high-speed and low-cost optical interconnects. The extraction of data from cryogenically cooled integrated circuits (ICs) has become of great interest for low-power data readout. Utilizing waveleng
Autor:
D. Hansel, Silviu Velicu, R. Kodama, A. Mukhortova, Yong Chang, J. Zhao, J. H. Park, F. Aqariden
Publikováno v:
SPIE Proceedings.
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diod
Publikováno v:
Infrared Technology and Applications XLII.
We present an approach to realize antimonide based superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN based superlattice detectors are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer
Autor:
Shinya Fukushima, Hideharu Matsuura, Shohei Ishikawa, Shungo Sakurai, Akinobu Takeshita, Atsuki Hidaka
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII.
One of the authors has proposed a simple-structure silicon X-ray detector (gated silicon drift detector: GSDD), whose structure is much simpler than commercial silicon drift detectors (SDDs). SDDs contain multiple built-in metal-oxide-semiconductor f
Autor:
Manas Ranjan Gartia, Robert M. Clegg, Zhida Xu, J. C. Mabon, John Paul Eichorst, Yun Sheng Chen, J. A.N.T. De Soares, Gang Logan Liu, Y. C. Bordain
Publikováno v:
SPIE Proceedings.
With the goal of improving photo-absorption of photovoltaic device and for plasmonic application we have fabricated nanopillar black silicon devices through etching-passivation technique which does not require any photomask and whole wafer scale unif