Zobrazeno 1 - 10
of 50
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Autor:
George W. Turner, Joseph P. Donnelly, Robert J. Bailey, John J. Zayhowski, Michael J. Manfra, Mohamed A. Diagne, Michael K. Connors, E.K. Duerr, Michael J. Grzesik
Publikováno v:
SPIE Proceedings.
At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm
Autor:
Jarrod Vaillancourt, Xuejun Lu
Publikováno v:
SPIE Proceedings.
We report a very longwave Infrared (> 14 μm) quantum dot photodetector working at 77 K. Very longwave infrared (VLWIR) detection at a cut-off wavelength of 15.3 μm was achieved through QD size engineering. Peak specific photodetectivity D* of 3.3x1
Autor:
Eric A. DeCuir, Omar Manasreh, Euclydes Marega, Gregory J. Salamo, Jiang Wu, Vasyl P. Kunets, Petr M. Lytvyn, B. S. Passmore
Publikováno v:
SPIE Proceedings.
Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular
Publikováno v:
SPIE Proceedings.
A 15-period GaAs/Al 0.3 Ga 0.7 As superlattice infrared photodetector (SLIP) is presented. A 1500 Angstrom wide Al 0.22 Ga 0.78 As blocking barrier is introduced to reduce the dark current. The measured noise power spectral density of dark current at
Autor:
Gi-Ming Shiue, Chia Ho, Chung-Chi Chang, Chun-hui Tsai, Ho-Ching Chien, Yu-Wen Chen, Tien-Ming Chuang, Han-Yu Chang, Feng-Yuh Juang, Mon-Shen Chen, Chung-Ren Lao, Gwo-Ji Horng
Publikováno v:
SPIE Proceedings.
A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR
Publikováno v:
SPIE Proceedings.
We report the result of a dark current measurement of a Type -II superlattice (T2SL) infrared focal plane array (FPA) , which consists of a 6 P cutoff T2SL detector array and the readout integration circuit (ROIC) ISC0903 of FLIR Systems. In order to
Publikováno v:
SPIE Proceedings.
By introducing coupled microstrip antennas on THz Distributed Feedback (DFB) Quantum Cascade Lasers (QCLs), the radiation efficiency of each feedback aperture is greatly enhanced. Single mode emission ~3 THz from a 31-period antenna-coupled third-ord
Autor:
Antoni Rogalski, Piotr Martyniuk
Publikováno v:
SPIE Proceedings.
InAsSb ternary alloy is potentially capable of operating at the longest cut-off wavelength (about 9 μm at 77 K) in the entire III-V family. Recently, there has been a considerable progress in development of the InAsSb focal plane arrays. The high op
Publikováno v:
SPIE Proceedings.
We report a bias selectable dual-band mid-wave infrared (MWIR) and long-wave infrared (LWIR) co-located detector with 3 μm active region thickness per channel that is highly selective and can perform under high operating temperatures for the MWIR ba