Zobrazeno 1 - 10
of 243
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technolo
Publikováno v:
Cryogenic Optical Systems and Instruments IV.
A 50 cm diameter, lightweight, Amersil TO8E, fused-natural-quartz mirror with a single arch cross section was tested at the NASA/Ames Research Center Cryogenic Optics Test Facility to measure cryogenic distortion and hysteresis. The mirror was cooled
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Autor:
Jan Šulc, Helena Jelínková, A. N. Nakladov, Vasilii A. Konyushkin, Michal Němec, Maxim E. Doroshenko, V. V. Osiko, Karel Veselský
Publikováno v:
SPIE Proceedings.
The goal of this work was an investigation of the temperature influence (in range 77 - 300 K) on laser properties of Tm:SrF2-CaF2 solid-solution, which is suitable as a gain medium for generation of radiation at 1.8-2 μm. The tested Tm:SrF2-CaF2 sam
Autor:
Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Publikováno v:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has
Publikováno v:
SPIE Proceedings.
Measurements of the polarized radiation often reveal specific physical properties of emission sources, such as strengths and orientations of magnetic fields offered by synchrotron radiation and Zeeman line emission, and the electron density distribut
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Publikováno v:
SPIE Proceedings.
We report on an ytterbium-doped fiber laser (FL) pumped by an Yb:YAG thin disk laser [1]. The FL essentially acts as a brilliance converter suitable for applications requiring a diffraction limited kilowatt-class laser source. The FL can be positione
Autor:
George W. Turner, Joseph P. Donnelly, Robert J. Bailey, John J. Zayhowski, Michael J. Manfra, Mohamed A. Diagne, Michael K. Connors, E.K. Duerr, Michael J. Grzesik
Publikováno v:
SPIE Proceedings.
At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm