Zobrazeno 1 - 3
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pro vyhledávání: '"77"'
Autor:
Antoni Rogalski, Jaroslaw Rutkowski
Publikováno v:
SPIE Proceedings.
P+-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe bulk monocrystals. To improve the photodiode performance, a thickness of n-type base layer was limited. The photodiodes performance was
Publikováno v:
SPIE Proceedings.
The p+-n homojunctions were formed by arsenic diffusion in the HgCdTe monocrystals and epilayers. Photodiode performance was established by measuring the current-voltage and spectral response characteristics. LWIR photodiodes are background limited a
Publikováno v:
SPIE Proceedings.
This paper presents the results of the first CO2 laser heterodyne measurements performed on boron implanted n+-p Hg0.8Cd0.2Te photodiodes. The measured data shows that this type of device structure is capable, of achieving bandwidths -20 of approxima