Zobrazeno 1 - 10
of 54
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Publikováno v:
SPIE Proceedings.
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Autor:
Eric A. DeCuir, Omar Manasreh, Euclydes Marega, Gregory J. Salamo, Jiang Wu, Vasyl P. Kunets, Petr M. Lytvyn, B. S. Passmore
Publikováno v:
SPIE Proceedings.
Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular
Autor:
Mikhail S. Nikitin
Publikováno v:
Detectors and Associated Signal Processing II.
Narrow-gap low-doped n-Hg 1-x Cd x Te (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n 77 ≈(1-10)×10 14 cm -3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing lay
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim
Publikováno v:
SPIE Proceedings.
In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular b
Autor:
Rolf Sauer, Milan Jaros, Klaus Thonke, Johannes Konle, Markus Hepp, Horst Kibbel, Wolfgang A. Cabanski, Hartmut Presting
Publikováno v:
SPIE Proceedings.
Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures have been grown by molecular beam epitaxy (MBE) on Si substrates for mid-infrared (3(mu) - 5(mu) ; 8(mu) - 12(mu) ) detection. These detectors operate at 77 K and are bas
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR