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pro vyhledávání: '"77"'
Autor:
D. Hansel, Silviu Velicu, R. Kodama, A. Mukhortova, Yong Chang, J. Zhao, J. H. Park, F. Aqariden
Publikováno v:
SPIE Proceedings.
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diod
Publikováno v:
SPIE Proceedings.
We have developed hybrid 256 by 256 focal plane arrays (FPAs) using MBE grown HgCdTe(MCT) layers on Si substrates for 10 micrometer-wavelength band detection and successfully demonstrated infrared images for the first time. The characteristics of MCT
Autor:
Jean-Luc Tissot, Francois Marion
Publikováno v:
SPIE Proceedings.
After a description of the flip-chip techniques developed at LETI, we present its main advantages and its evolution. Using this basic method, a mass production procedure has been developed in order to decrease the cost of the technological step. With