Zobrazeno 1 - 10
of 35
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensiti
Autor:
B. Ziętek, Piotr Targowski
Publikováno v:
SPIE Proceedings.
Delayed luminescence spectra of ethanolic solution of RhilO Rh19 Rh6G TmRh RhB and Rh3B at 77 K were investigated. Obtained results indicated that photoionization of the dye molecules being in their triplet states and then recombination of the pair i
Autor:
Michal Němec, Michal Jelínek, V. V. Osiko, N. O. Kovalenko, Igor S. Terzin, Jan Šulc, Helena Jelínková, Maxim E. Doroshenko
Publikováno v:
SPIE Proceedings.
Fe2+:Cd1-xMnxTe solid solution spectroscopic and lasing properties depending on temperature and Mn concentration x were investigated. A set of Fe2+:Cd1-xMnxTe crystals with different concentration of Mn (x = 0.1, 0.52, 0.68, and 0.78) was synthesized
Autor:
Sam A. Keo, Sarath D. Gunapala, Arezou Khoshakhlagh, David Z. Ting, Alexander Soibel, Cory J. Hill, Linda Höglund
Publikováno v:
SPIE Proceedings.
In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the
Autor:
Eric A. DeCuir, Omar Manasreh, Euclydes Marega, Gregory J. Salamo, Jiang Wu, Vasyl P. Kunets, Petr M. Lytvyn, B. S. Passmore
Publikováno v:
SPIE Proceedings.
Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular
Publikováno v:
SPIE Proceedings.
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples areprepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er- 20 luminescent center
Autor:
Masayuki Nogami, Yoshihiro Abe
Publikováno v:
SPIE Proceedings.
Sm2+-doped glasses in the system of Al2O3-SiO2 were prepared by the sol-gel processing of metal alkoxides and the reaction with H2 gas at 800 degrees Celsius, of which hole burning properties were investigated. Sm3+ ions-containing glasses prepared b
Publikováno v:
SPIE Proceedings.
Using a picosecond excitation source and a time-resolved streak camera detection system, we have observed the time-resolved photoluminescence spectra of C60 from toluene solution at room temperature and from thin film at both room temperature and 77
Publikováno v:
SPIE Proceedings.
Spectrally-resolved pico- and nanosecond fluorescence kinetics of photosystem II reaction center (RC) preparations and RC together with CP47 proximal antenna have been studied at room temperature and at 77 K. The following conclusions have been made.
Publikováno v:
SPIE Proceedings.
Resonance-fluorescence-line-narrowing studies have been performed on a representative group of Er3+ -doped glasses for excitation in both the 1530 and 980-nm bands at 4.2, 77, 200, and 300 K. Fluorozirconate, fluorophosphate, phosphate, silicate, Ge/