Zobrazeno 11 - 20
of 299
pro vyhledávání: '"77"'
Publikováno v:
Optical Components and Materials XVIII.
In the pursuit of new mid-IR laser gain materials, dysprosium-doped barium fluoride was evaluated for its potential laser emission in the 3-μm spectral region. Comprehensive spectroscopic characterization was performed, including absorption, fluores
Autor:
Valery Filippov, Andrei Fedotov, Vasilii Ustimchik, Regina Gumenyuk, Teppo Noronen, Yuri Chamorovskii, Joona Rissanen
Publikováno v:
Fiber Lasers XVII: Technology and Systems.
We present a single-mode narrow band linear-polarized picosecond green fiber source delivered up to 146.4 kW of peak power. The laser architecture is composed of frequency-doubled all-fiber MOPA system operating at 1064 nm. The commercially available
Autor:
Michal Němec, Michal Jelínek, V. V. Osiko, N. O. Kovalenko, Igor S. Terzin, Jan Šulc, Helena Jelínková, Maxim E. Doroshenko
Publikováno v:
SPIE Proceedings.
Fe2+:Cd1-xMnxTe solid solution spectroscopic and lasing properties depending on temperature and Mn concentration x were investigated. A set of Fe2+:Cd1-xMnxTe crystals with different concentration of Mn (x = 0.1, 0.52, 0.68, and 0.78) was synthesized
Autor:
Jan Šulc, Helena Jelínková, A. N. Nakladov, Vasilii A. Konyushkin, Michal Němec, Maxim E. Doroshenko, V. V. Osiko, Karel Veselský
Publikováno v:
SPIE Proceedings.
The goal of this work was an investigation of the temperature influence (in range 77 - 300 K) on laser properties of Tm:SrF2-CaF2 solid-solution, which is suitable as a gain medium for generation of radiation at 1.8-2 μm. The tested Tm:SrF2-CaF2 sam
Autor:
Aboozar Mosleh, Thach Pham, Hameed A. Naseem, Baohua Li, Wei Du, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard A. Soref, Shui-Qing Yu, Joe Margetis
Publikováno v:
SPIE Proceedings.
Si based Ge1-xSnx photoconductors, with Sn incorporation of 0.9, 3.2, and 7%, were fabricated using a CMOS-compatible process. Temperature dependent study was conducted from 300 to 77 K. The first generation device (standard photoconductor, PD) shows
Autor:
Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Publikováno v:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has
Publikováno v:
SPIE Proceedings.
Measurements of the polarized radiation often reveal specific physical properties of emission sources, such as strengths and orientations of magnetic fields offered by synchrotron radiation and Zeeman line emission, and the electron density distribut
Publikováno v:
SPIE Proceedings.
The 1.6 μm emission properties originating from the 3 F 3 , 3 F 4 → 3 H 4 transition of Pr 3+ ions in Pr-doped PbCl 2 crystals were investigated for possible application in resonantly-pumped, eye-safe laser development. Pr: PbCl 2 was synthesized
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
G. A. Newburgh, Mark Dubinskii
Publikováno v:
Laser Technology for Defense and Security VII.
We report what is believed to be the first laser operation based on Ho 3+ -doped YVO 4 . The Ho +3 : YVO 4 was resonantly diode-pumped at ~1.93 μm to produce up to 1.6 W of continuous wave (CW) output power at ~2.054 μm. The laser had a slope effic