Zobrazeno 1 - 5
of 5
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasi
Autor:
Che-Wei Tsao, Tzeng Tsong Wu, Tsung Sheng Kao, Jyun Hao Lin, Shing Chung Wang, Shyh-Jer Huang, Yan-Kuin Su, Tien-Chang Lu, Da-Wei Lin, Hao-Chung Kuo
Publikováno v:
SPIE Proceedings.
In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence ( -PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavitie
Autor:
Ganesh Balakrishnan, N. Nuntawong, S. H. Huang, Jun Tatebayashi, Diana L. Huffaker, M. N. Kutty, A. Jallipalli, L. R. Dawson
Publikováno v:
SPIE Proceedings.
We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and their application to III-Sb based quantum well (QW) light-emitting devices including edge-emitting laser diodes and vertical-cavity surfac
Publikováno v:
SPIE Proceedings.
We propose to develop a submillimeter quantum cascade laser in the GaAs/AlGaAs material system. This device relies on intersubband transitions in GaAs quantum wells of the device for lasing. Preliminary calculations show that there is sufficient gain