Zobrazeno 31 - 40
of 46
pro vyhledávání: '"77"'
Autor:
E. R. Blazejewski, D. Z. Ting, Sir B. Rafol, Sarath D. Gunapala, C. A. Shott, John K. Liu, Yun-Chorng Chang, Sanjay Krishna, Sam A. Keo, Cory J. Hill, Sumith V. Bandara, Jason M. Mumolo
Publikováno v:
SPIE Proceedings.
Epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared (LWIR) focal plane arrays (FPAs). The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb
Publikováno v:
SPIE Proceedings.
The InAs0.04Sb0.96 epilayers with a cutoff wavelength of 12 μm were successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME). Fourier transform infrared (FTIR) transmission spectra reveal a strongly band gap narrowing for
Autor:
H.Y. Liu, M. S. Skolnick, V. P. Evtikhiev, Ian R. Sellers, A. S. Shkolnik, Mark Hopkinson, S. Pellegrini, Georgy G. Zegrya, Gerald S. Buller, Nikita Yu. Gordeev, Leonid Ya. Karachinsky
Publikováno v:
SPIE Proceedings.
Time-resolved photoluminescence decay measurements have been performed on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate mis-orientation alone, but otherwise under identical growth conditions. Ground-st
Publikováno v:
SPIE Proceedings.
We have successfully observed room-temperature electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates. The InAs QDs were grown by droplet hetero-epitaxy using low-pressure organometallic vapor epitaxy (OMVPE). There were two ki
Publikováno v:
SPIE Proceedings.
InAs quantum dot infrared photodetectors based on bound-to- bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers . At 77 K
Autor:
Cyril Becker, Renato Bisaro, Borge Vinter, Isabelle Prevot, Xavier Marcadet, Olivier Durand, Carlo Sirtori, François H. Julien
Publikováno v:
In-Plane Semiconductor Lasers V.
We describe some key growth issues for Mid-Infrared electroluminescent devices based on a quantum-cascade design using InAs/AlSb heterostructures grown on GaSb substrates. Structural and optical properties of antimonide/arsenide interfaces are first
Autor:
E. Herbert Li, A. S. W. Lee
Publikováno v:
SPIE Proceedings.
Strained layer superlattices based on Sb semiconductor material are proposed for long wavelength photodetector applications. Theoretical studies on the band structure of AlGaSb/GaSb, AlInSb/InSb, and GaInSbfInAs superlattices showthat the wavelength
Autor:
Anastasia Astakhova, Andrei M. Monakhov, Maya P. Mikhailova, Victor V. Sherstnev, Konstantin D. Moiseev, Yury P. Yakovlev
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach to design mid-IR lasers based on type II heterostructures with strong asymmetric band offset confinement at the interface. It allows to create the high barriers for carriers and to reduce leakage current from
Autor:
Alex S. W. Lee, E. Herbert Li
Publikováno v:
SPIE Proceedings.
Intermixing effect in type-II Ga 0.6 In 0.4 Sb/InAs superlattices is studied. The interdiffusion of both group- III and group V atoms across the heterointerface modifies the superlattices optical properties and electronic structures. The intermixed-i
Publikováno v:
SPIE Proceedings.
Electric and optical properties of IR photodiodes based on InAs/(GaIn)Sb superlattices were investigations. Mesa diodes were fabricated with cut-off wavelengths ranging from 7.5 to 12 micrometers , showing 77 K detectivities between 1 X 1012 cmHz0.5/