Zobrazeno 1 - 10
of 47
pro vyhledávání: '"77"'
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface da
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Publikováno v:
SPIE Proceedings.
In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular b
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low
Autor:
Georgy G. Zegrya, Maya P. Mikhailova, Ivan N. Timchenko, Yury P. Yakovlev, Konstantin D. Moiseev, I. A. Andreev
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were obse
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b
Publikováno v:
SPIE Proceedings.
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective m
Publikováno v:
SPIE Proceedings.
High Tc superconductor films were prepared by laser deposition. Epitaxial YBaCuO films with high critical current density are obtained for a uniform laser beam energy density of about 4 J/cm2, a substrate temperature above 730°C and an oxygen pressu
Autor:
Andreas Wörl, Frank Rutz, Volker Daumer, Robert Rehm, T. Stadelmann, R. Müller, Jasmin Niemasz
Publikováno v:
International Conference on Space Optics — ICSO 2018.
Type-II superlattices (T2SLs) are currently recognized as the sole material system offering comparable performance to HgCdTe, yet providing higher operability, stability over time, spatial uniformity, scalability to larger formats, producibility and
Autor:
Silviu Velicu
Publikováno v:
Infrared Sensors, Devices, and Applications VIII.
Higher operating temperatures can be provided by a system based on HgCdTe infrared detectors utilizing optimized material parameters (i.e. doping and defects) and non-equilibrium device architectures that suppress detector diffusion current. A PIN (P