Zobrazeno 1 - 10
of 45
pro vyhledávání: '"77"'
Autor:
Philippe Tribolet, Alain Manissadjian, Xavier Marcadet, Philippe Bois, Eric Herniou, Eric Costard
Publikováno v:
Infrared Technology and Applications XXVII.
Standard GaAs/AlGaAs QWIPs are now well established for LWIR detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The realization of large FPAs (up to 640 X 480) drawing on the standard III-V
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
3D numerical simulation of intracavity-contacted oxide-confined VCSELs operating at cryogenic temperatures is reported. Spatial profiles and 3D distributions of electrical potential, current and ture are calculated. The device geometry is found to ca
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Autor:
Jarrod Vaillancourt, Xuejun Lu
Publikováno v:
SPIE Proceedings.
We report a very longwave Infrared (> 14 μm) quantum dot photodetector working at 77 K. Very longwave infrared (VLWIR) detection at a cut-off wavelength of 15.3 μm was achieved through QD size engineering. Peak specific photodetectivity D* of 3.3x1
Autor:
Bijan Movaghar, Ho Chul Lim, John Szafraniec, Wei Zhang, Manijeh Razeghi, Maho Taguchi, S. Tsao
Publikováno v:
SPIE Proceedings.
Here we report the first demonstrations of infrared focal plane array (FPA) based on GaAs and InP based quantum dot infrared photodetectors (QDIPs). QDIPs are extension of quantum well infrared photodetectors (QWIPs) and are predicted to outperform Q
Publikováno v:
SPIE Proceedings.
Terahertz Bloch oscillator based on GaAs-GaAlAs superlattice with weak barriers is proposed. Here due to interminiband tunneling current is a rising function of electric field while the tunneling and the Bloch oscillations produce dynamic negative di
Publikováno v:
SPIE Proceedings.
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples areprepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er- 20 luminescent center
Autor:
Manijeh Razeghi
Publikováno v:
Photodetectors: Materials and Devices VI.
We report on the growth and characterization of InSbBi, InTlSb, InTlP, and the quaternary alloys for uncooled long- wavelength infrared photodetector applications. The layers were grown on InSb and GaAs substrates by low-pressure metalorganic chemica
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR