Zobrazeno 31 - 40
of 45
pro vyhledávání: '"77"'
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
Using 45 degree(s) geometry or grating for optical coupling, three kinds of GaAs/AlxGa1-xAs multiquantum well (MQW) photodetectors having different response range, i.e., 7.50 - 8.85, 8.20 - 9.80, and 9.60 - 11.40 micrometers , have been fabricated an
Publikováno v:
Infrared Detectors: State of the Art.
Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates
Publikováno v:
SPIE Proceedings.
Selective area epitaxial growth of gallium arsenide by laser assisted chemical vapor deposition (LCVD) offers a promising approach to in situ device fabrication and integration. By scanning a focussed Ar ion laser beam across a thermally biased subst
Publikováno v:
International Conference on Thin Film Physics and Applications.
We have measured the nonlinear absorption change in ZnSe thin films at 77 K. The nonlinear mechanisms are attributed to the combination of the increasing absorption and the bleaching of excitons.
Publikováno v:
SPIE Proceedings.
The two-dimensional electron gas charge-coupled device (2DEG-CCD) structure is an outgrowth of recent advances in 2DEG-FET structures for digital logic circuitry and microwave devices. The 2DEG-FET structures, which are known by severalacronyms such
Publikováno v:
SPIE Proceedings.
(100)CdZnTe epilayers are grown by hot wall beam epitaxy (HWBE) on (100) GaAs. The CdZnTe epilayers are used as substrates for the growth of Hg1_CdTe (x = 0.27 - 0.32) layers by closed space vapor phase epitaxy. The Hg1CdTe layers have an x-ray rocki
Publikováno v:
SPIE Proceedings.
(100)CdZnTe epilayers are grown by hot wall beam epitaxy (HWBE) on (100) GaAs. The CdZnTe epilayers are used as substrates for the growth of Hg1_CdTe (x = 0.27 — 0.32) layers by closed space vapor phase epitaxy. The Hg1CdTe layers have an x—ray r
Publikováno v:
SPIE Proceedings.
GaAs/Al(0.31)Ga(0.69)As IR detector of multiquantum well structure with a single bound state in a GaAs well have been fabricated. The peak wavelength of spectral responsivity at 77 K was 8.3 microns. The measured responsivities were 20 V/W for A-type
Publikováno v:
Quantum Well and Superlattice Physics III.
In order to gain information about the band offset in the strained layer InGa1As/GaAs system we have investigated photorefleCtanCe (PR) from two single quantum wel 1 samples at 300 K and 77 K. Our samples have we 1 1 width L= 110 A (sample 1) and L =
Publikováno v:
Quantum Well and Superlattice Physics III.
The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-orientedsemi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostaticpressure in the range of 0- 30 Kbar. The dependence of th