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Autor:
Jarrod Vaillancourt, Xuejun Lu
Publikováno v:
SPIE Proceedings.
We report a very longwave Infrared (> 14 μm) quantum dot photodetector working at 77 K. Very longwave infrared (VLWIR) detection at a cut-off wavelength of 15.3 μm was achieved through QD size engineering. Peak specific photodetectivity D* of 3.3x1
Autor:
Olivier Theriault, Anthony J. SpringThorpe, Alexandre W. Walker, Karin Hinzer, Jeffrey F. Wheeldon, Christopher E. Valdivia, Bruno Riel
Publikováno v:
SPIE Proceedings.
InAs quantum dots in a GaAs matrix are studied. Those quantum dots are used in applications to enhance the overall efficiency of multi-junction solar cells beyond 40%. Photoluminescence measurements at 77 K using a 532 nm laser have been performed on
Publikováno v:
SPIE Proceedings.
We have investigated the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtubebased coherent light sources on GaAs and Si, which are formed by self-rolling of pseudomorphically strained semiconductor bilayers through controlle