Zobrazeno 1 - 10
of 47
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Autor:
Mikhail S. Nikitin
Publikováno v:
Detectors and Associated Signal Processing II.
Narrow-gap low-doped n-Hg 1-x Cd x Te (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n 77 ≈(1-10)×10 14 cm -3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing lay
Publikováno v:
Materials for Infrared Detectors.
The epitaxial growth of Hg1-xCdxTe in the composition range 0.40 < x < 0.17 has been carried out on 3-inch CdTe/Si substrates mounted on indium-free molybdenum substrate holders. Because this mounting configuration prevents the effective use of a dir
Publikováno v:
SPIE Proceedings.
The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial l
Autor:
Rolf Sauer, Milan Jaros, Klaus Thonke, Johannes Konle, Markus Hepp, Horst Kibbel, Wolfgang A. Cabanski, Hartmut Presting
Publikováno v:
SPIE Proceedings.
Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures have been grown by molecular beam epitaxy (MBE) on Si substrates for mid-infrared (3(mu) - 5(mu) ; 8(mu) - 12(mu) ) detection. These detectors operate at 77 K and are bas
Publikováno v:
Oxide-based Materials and Devices XII.
Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allo
Publikováno v:
SPIE Proceedings.
The surface resistance, Rs, at microwave frequencies has been an important qualification parameter for high temperature superconductor (HTS) thin films. HTS thin films with low Rs have been realized on many substrates, and many groups have realized R
Autor:
Hong-Cheng Li
Publikováno v:
SPIE Proceedings.
High temperature superconducting thin films of GdBa 2 Cu 3 O 7 (GBCO) were fabricated by de-magnetron sputtering on SrTiO 3 , Zr(Y)O 2 (YSZ), MgO and LaAlO 3 (LAO) single crystal substrates. The X-ray diffraction and TEM analysis showed the films wer
Autor:
George V. Negrete, Robert B. Hammond
Publikováno v:
SPIE Proceedings.
Microwave data on epitaxial Tl2Ba2CaCu2O8 thin films grown on LaAlO3 substrates are reported. The authors fabricated and tested microstrip resonators using these films and performed measurements of the loss tangent of lanthanum aluminate substrates a
Autor:
David K. Fork, James B. Boyce, G.A. N. Connell, Theodore H. Geballe, David B. Fenner, Julia M. Phillips, Nathan Newman, A. Barrera
Publikováno v:
SPIE Proceedings.
Efforts to grow high quality films of YBCO on Si have been complicated by factors discussed in Ref. 1, chief among them being the reaction between YBCO and Si, which is damaging even at 550 C. This is well below the customary temperatures for YBCO fi