Zobrazeno 11 - 20
of 47
pro vyhledávání: '"77"'
Autor:
Antonio Mogro-Campero
Publikováno v:
SPIE Proceedings.
Work on high temperature superconductor films on silicon is reviewed. High temperature superconductor thin films of YBa2Cu3O7-x, (YBCO) have been made on single crystal SrTiO3 with zero resistance transition temperatures(Tc) of 90 K and critical curr
Publikováno v:
SPIE Proceedings.
High Tc superconductor films were prepared by laser deposition. Epitaxial YBaCuO films with high critical current density are obtained for a uniform laser beam energy density of about 4 J/cm2, a substrate temperature above 730°C and an oxygen pressu
Autor:
Krishnamurthy Mahalingam, Joseph Peoples, S. L. Bowers, Gail J. Brown, Frank Szmulowicz, Heather J. Haugan
Publikováno v:
SPIE Proceedings.
Gallium (Ga)-free InAs/InAsSb superlattices (SLs) are being actively explored for infrared detector applications due to the long minority carrier lifetimes observed in this material system. However, compositional and dimensional changes through antim
Publikováno v:
SPIE Proceedings.
We reported the influence of free-standing (FS) GaN substrate on ultraviolet light-emitting-diodes (UV LEDs) by atmospheric-pressure metal-organic chemical vapor deposition (APMOCVD). The Raman spectrum shows the in-plane compressive stress of the Ga
Publikováno v:
SPIE Proceedings.
The InAs0.04Sb0.96 epilayers with a cutoff wavelength of 12 μm were successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME). Fourier transform infrared (FTIR) transmission spectra reveal a strongly band gap narrowing for
Publikováno v:
SPIE Proceedings.
Based on the mature and reproducible HgCdTe process developed by CEA-LETI-Infrared Laboratory and industrialized by Sofradir, two new detectors with a cut-off wavelength tuned between 9 μm and 12 μm have been developed. For compact LW cameras, Sofr
Publikováno v:
SPIE Proceedings.
Photosensitive isoperiodical heterojunctions (HJ) Pb1-xSnxSe(In)/PbSe1-xSx were obtained in the ultrahigh vacuum (≤3÷5•10-7 Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF2
Publikováno v:
SPIE Proceedings.
The experimental results of photoelectric and optic properties on the gallium contained (NGa=O,5÷1 at%), Pb1-xMnxTe epitaxial films with thickness d=1÷5 μm, obtained by a molecular beam condensation method on BaF2 (111) substrate have been present
Autor:
T. Nurgaliev, Julia E. Mozhaeva, J. Bindslev Hansen, P.B. Mozhaev, T. Donchev, E. Mateev, Sergei Zhgoon, Claus Schelde Jacobsen, Igor Bdikin, A. E. Barinov
Publikováno v:
SPIE Proceedings.
Tilted-axes YBCO thin films were deposited on NdGaO3 (NGO) substrates with surface inclination from the standard (110) crystallographic plane. All deposited films were epitaxial with the (001) YBCO plane aligned with the {110} planes of the substrate
Publikováno v:
SPIE Proceedings.
Thin MnCdHgTe epitaxial layers (4-6 μm) have been obtained by RF sputtering with localization of the mercury glow discharge in quasi-closed volume. The peculiarities of their condensation of CdTe substrates have been studied. The influence of techno