Zobrazeno 1 - 8
of 8
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Publikováno v:
SPIE Proceedings.
The InAs0.04Sb0.96 epilayers with a cutoff wavelength of 12 μm were successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME). Fourier transform infrared (FTIR) transmission spectra reveal a strongly band gap narrowing for
Autor:
Wuu Wen Lin, Hung Ming Yen, Wen Ruey Tsai, Yao Song Lee, Chung Chen Hsieh, Min Yen Yeh, Shan Cheng Pan
Publikováno v:
SPIE Proceedings.
The ZnS 0.06 Se 0.94 epilayer is obtained by metallorganic chemical vapor deposition (MOCVD) with Se on-off modulation. The activation energy of as grown ZnS x Se 1- x layer is lower than that by conventional growth method. From the 77 K photolumines
Publikováno v:
SPIE Proceedings.
Selective area epitaxial growth of gallium arsenide by laser assisted chemical vapor deposition (LCVD) offers a promising approach to in situ device fabrication and integration. By scanning a focussed Ar ion laser beam across a thermally biased subst
Publikováno v:
SPIE Proceedings.
(100)CdZnTe epilayers are grown by hot wall beam epitaxy (HWBE) on (100) GaAs. The CdZnTe epilayers are used as substrates for the growth of Hg1_CdTe (x = 0.27 - 0.32) layers by closed space vapor phase epitaxy. The Hg1CdTe layers have an x-ray rocki
Publikováno v:
SPIE Proceedings.
(100)CdZnTe epilayers are grown by hot wall beam epitaxy (HWBE) on (100) GaAs. The CdZnTe epilayers are used as substrates for the growth of Hg1_CdTe (x = 0.27 — 0.32) layers by closed space vapor phase epitaxy. The Hg1CdTe layers have an x—ray r
Publikováno v:
Semiconductor Growth Technology.
Vapor-phase epitaxy (VPE) systems for the growth of 1) GaAs on Cr-doped GaAs substrates, and 2) lattice matched GaInAs and GaInAsP on Fe-doped InP substrates are briefly described. Layer composition of the ternary and quaternary compounds were measur
Publikováno v:
SPIE Proceedings.
We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The quantum wells in this structure are six uncoupled InAs layers 6.6 A thick separated by 509 A thick GaAs barriers. These ar