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Publikováno v:
SPIE Proceedings.
Thiogallate compounds represented by general formula MGa 2 S 4 [where M- Ca +2 , Ba +2 , Sr +2 , Pb +2 , Eu +2 , Eu +3 , ( Na +1 La +3 ) and ( Na +1 Ce +3 )] are highly effective electro-luminescence and laser materials. These materials were first sy
Publikováno v:
SPIE Proceedings.
We have successfully observed room-temperature electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates. The InAs QDs were grown by droplet hetero-epitaxy using low-pressure organometallic vapor epitaxy (OMVPE). There were two ki
Autor:
Irina I. Tychina, V.P. Tartachnik, Yaroslav M. Olikh, Volodimir I. Kuts, Olexsandr M. Gontaruk, Dmytro V. Korbutyak, Anatoly P. Kudin
Publikováno v:
SPIE Proceedings.
The effectiveness of radiative recombination of GaP light- diode structures, grown by means of epitaxial technique, is determined by deep nonradiative level concentration, which can be changed by irradiation of samples with fast particles or with the
Publikováno v:
SPIE Proceedings.
New light emitting diodes at 1.00 μm obtained from synthesized InP : Yb bulk crystal are studied. The n-type Yb doped bulk material was grown by gradient freeze method. Mg+ ions were implanted in this material for p-type layer. The indepth localizat