Zobrazeno 1 - 10
of 18
pro vyhledávání: '"77"'
Autor:
George V. Negrete, Robert B. Hammond
Publikováno v:
SPIE Proceedings.
Microwave data on epitaxial Tl2Ba2CaCu2O8 thin films grown on LaAlO3 substrates are reported. The authors fabricated and tested microstrip resonators using these films and performed measurements of the loss tangent of lanthanum aluminate substrates a
Autor:
Paul W. Rehrig, Wesley S. Hackenberger, Shujun Zhang, Xiaoning Jiang, Jun Luo, Thomas R. Shrout
Publikováno v:
SPIE Proceedings.
In this paper low voltage single crystal actuators were investigated using thin PMN-PT plates for applications requiring low voltage, large strain, low profile and/or actuation at cryogenic temperatures. Firstly, single crystal thickness effect on pi
Autor:
Paul W. Rehrig, Shuxiang Dong, Dwight D. Viehland, Xiaoning Jiang, Brian Patrick, Wesley S. Hackenberger, Edward C. Smith, James D. Moore
Publikováno v:
SPIE Proceedings.
TRS is developing new actuators based on single crystal piezoelectric materials such as Pb(Zn1/3Nb2/3)1-xTixO3 (PZN-PT) and Pb(Mg1/3Nb2/3)x-1TixO3 (PMN-PT) which exhibit very high piezoelectric coefficients (d33 = 1800-2200 pC/N) and electromechanica
Publikováno v:
SPIE Proceedings.
A CMOS test chip has been designed and fabricated which can monolithically integrate ultra low-power operational amplifiers with neural microprobes through post-IC processing. Neural microprobes of varying widths (70 μm, 60 μm, 50 μm, and 40 μm)
Publikováno v:
SPIE Proceedings.
Noise due to back-gate forward bias between substrate and source of a MOSFET is analyzed and simulated. Noise level is compared between two CMOS circuits with and without back-gate forward bias. It is found that the output noise introduced by the bac
Autor:
Kazunori Komorita
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
By using the MOM device of Bi203 filiiis, soiiie electrical properties on these filiiis or the device are studied as follows; (1) The behavior of the electric current across the thickBi203 filius under DC field, is elucidated by the formula IccV for
Autor:
T.R. Clem
Publikováno v:
SPIE Proceedings.
Magnetic detection offers one approach to complement optical, infrared, radar, and acoustic sensing for wide-area detection, localization and classification applicable for a large class of subsurface structures. Sensors incorporating Superconducting
Autor:
David A. Grove
Publikováno v:
SPIE Proceedings.
New generation x-ray instruments for spacecraft such as ASTRO-E and CONSTELLATION-X have very specialized requirements, notably operation at cryogenic temperatures. Luxel Corporation, under a NASA Phase I SBIR contract, undertook the demonstration of
Publikováno v:
SPIE Proceedings.
PtSi source/drain Schottky barrier MOSFETs have been fabricated at sub-50-nm channel lengths with 19-angstrom gate oxide. These p-channel devices employ gate-induced field emission through the PtSi approximately 0.2-eV hole barrier to achieve current
Publikováno v:
SPIE Proceedings.
We demonstrated a CMOS invertor with a 15 ps propagation delay (tpd) at 77 K. This device uses n+ - p+ double-gate SOI MOSFETs with a gate length (LG) of 0.19 micrometers and a gate oxide thickness (tox) around 9 nm. The channel doping concentration