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Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
3D numerical simulation of intracavity-contacted oxide-confined VCSELs operating at cryogenic temperatures is reported. Spatial profiles and 3D distributions of electrical potential, current and ture are calculated. The device geometry is found to ca
Publikováno v:
SPIE Proceedings.
The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial l
Autor:
Preston T. Webster, Jin K. Kim, Lilian K. Casias, Christian P. Morath, Elizabeth H. Steenbergen, Sanjay Krishna, Ganesh Balakrishnan, Vincent M. Cowan
Publikováno v:
Infrared Technology and Applications XLIV.
Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type abso
Autor:
Isabelle Ribet-Mohamed, Philippe Christol, H. Ait-Kaci, K. Jaworowicz, Sylvie Contreras, C. Cervera, R. Chaghi, Jean-Baptiste Rodriguez, Leszek Konczewicz
Publikováno v:
SPIE Proceedings.
Electrical properties of non-intentionally doped (nid) InAs/GaSb Superlattice (SL) structures and p-nid-n detectors grown by Molecular Beam Epitaxy on GaSb substrate are reported. The SL structures were made of 600 periods of 8 InAs monolayers (MLs)
Publikováno v:
SPIE Proceedings.
One of the main problems for the fabrication of optoelectronic devices in the blue spectral range is the limited p-dopability and the resulting high contact resistivity of p-ZnSe. We show that the admixture of even small Te fractions to ZnSe has a st