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pro vyhledávání: '"77"'
Autor:
Preston T. Webster, Jin K. Kim, Lilian K. Casias, Christian P. Morath, Elizabeth H. Steenbergen, Sanjay Krishna, Ganesh Balakrishnan, Vincent M. Cowan
Publikováno v:
Infrared Technology and Applications XLIV.
Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type abso
Autor:
Nelson Rowell, R. B. Young
Publikováno v:
SPIE Proceedings.
A Fourier transform infrared (FT-IR) spectrometer has been combined with a PL apparatus for the study of semiconductors. Fourier transform spectroscopy has certain advantages for PL, especially in the infrared, including improved signal to noise, hig
Autor:
E. S. Hellman, Kevin L. Lear, P. M. Pitner, Byung-Gook Park, James S. Harris, D. Thomas, Thierry Weil, E. Wolak
Publikováno v:
SPIE Proceedings.
The effect of impurities placed in double barrier resonant tunneling diodes, on the current voltage characteristics of the devices was experimentally determined. Four different double barrier structures were grown by Molecular Beam Epitaxy with n-typ