Zobrazeno 1 - 10
of 46
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Autor:
Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Publikováno v:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has
Autor:
G. A. Newburgh, Mark Dubinskii
Publikováno v:
Laser Technology for Defense and Security VII.
We report what is believed to be the first laser operation based on Ho 3+ -doped YVO 4 . The Ho +3 : YVO 4 was resonantly diode-pumped at ~1.93 μm to produce up to 1.6 W of continuous wave (CW) output power at ~2.054 μm. The laser had a slope effic
Autor:
Diana L. Huffaker, M. N. Kutty, A. Jallipalli, Ganesh Balakrishnan, S. H. Huang, L. R. Dawson
Publikováno v:
SPIE Proceedings.
We present a 1.54 μm, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5° substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pu
Autor:
M.A. Remennyi, Georgii N. Talalakin, Nikolai M. Stus, S. A. Karandashev, B. A. Matveev, Meyrhan Aydaraliev, Nonna V. Zotova
Publikováno v:
SPIE Proceedings.
Multimode pulse (P equals 1.56 W, I equals 9.5 A) and CW (P equals 160 mW, I equals 1 A) operation is reported at 77 K for the broad (w equals 200 micrometer) contact InGaAsSb(Gd)/InAsSbP diode lasers with (lambda) equals 3.0 divided by 3.3 micromete
Autor:
R.J. Menna, M. J. Yang, A.R. Sugg, Donna W. Stokes, Linda J. Olafsen, William W. Bewley, Edward H. Aifer, Gregory H. Olsen, Ramon U. Martinelli, M. Maiorov, Jerry R. Meyer, John C. Connolly, Hao Lee, Christopher L. Felix, I. Vurgaftman, Dmitri Z. Garbuzov
Publikováno v:
SPIE Proceedings.
Recent progress towards the realization of high-power, non- cryogenic (quasi-)cw mid-IR lasers based on the `W' configuration of the active region is reported. Type-II diodes with AlGaAsSb broadened-waveguide separate confinement regions are the firs
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Publikováno v:
Space Optics 1994: Earth Observation and Astronomy.
The MARS 94 spacecraft is devoted to a mission to the planet Mars. Planned to be launched in October 1994, it shall reach the planet in September 1995. The lifetime is one Mars year. A second spacecraft will follow two years later. This paper present
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b