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Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Publikováno v:
SPIE Proceedings.
Hg 0.78 Cd 0.22 Te n on p photovoltaic diodes were fabricated with the wafers grown by liquid-phase epitaxy on CdTe substrate which have a cutoff wavelength of 10.5 micrometer. The wafer was doped with Hg vacancies and the acceptor concentration was
Autor:
Philippe Bouchut, P. Ferret, A. Million, Pierre Nicolas, Gérard Destefanis, Jean-Paul Chamonal
Publikováno v:
SPIE Proceedings.
Middle wavelength IR photovoltaic detectors were fabricated with HgCdTe epilayers grown by molecular beam epitaxy. The epilayers were grown on a slightly misoriented (111) B CdZnTe substrate and were twin free. Epitaxy was carried out with substrate