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Publikováno v:
SPIE Proceedings.
This article describes the charge injection into porous silicon structures fabricated by electrochemical technique on 20 Ohm cm p-type silicon. The I-V characteristics, photoluminescence spectra and lifetime kinetics studied at temperatures 77 K, 293
Autor:
Imelda Groves, G. Pollack, M. Song, George A. Brown, Chih-Chia Lin, Jason C. S. Woo, C. Hwang, K.P. MacWilliams, Larry C. Dawson, Arvind I. D'Souza, K. Green
Publikováno v:
SPIE Proceedings.
Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was c