Zobrazeno 1 - 10
of 79
pro vyhledávání: '"77"'
Autor:
Philippe Tribolet, Alain Manissadjian, Xavier Marcadet, Philippe Bois, Eric Herniou, Eric Costard
Publikováno v:
Infrared Technology and Applications XXVII.
Standard GaAs/AlGaAs QWIPs are now well established for LWIR detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The realization of large FPAs (up to 640 X 480) drawing on the standard III-V
Publikováno v:
SPIE Proceedings.
A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technolo
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Publikováno v:
8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices.
High sensitive Terahertz detection can be achieved by properly constructing Metal-Semiconductor-Metal (MSM) structure with semiconductor materials. In this study, Mercury-Cadmium-Telluride (MCT) film was used to fabricate MSM Terahertz detectors. The
Autor:
Suleyman Azman, Codin Gheorghe, Petter Øya, Dirk Meier, Bahram Najafiuchevler, Hans Kristian Otnes Berge, David Steenari, Philip Påhlsson, Mehmet Akif Altan, Jörg Ackermann, Jahanzad Talebi, Amir Hasanbegovic, Alf Olsen, Gunnar Maehlum
Publikováno v:
SPIE Proceedings.
In this paper we present initial test results of the Near Infrared Readout and Controller ASIC (NIRCA), designed for large area image sensors under contract from the European Space Agency (ESA) and the Norwegian Space Center. The ASIC is designed to
Autor:
James McCurdy, Chris Kamilar, Pradip Mitra, M. R. Skokan, Richard Scritchfield, Xiaoli Sun, Terry Welch, Jeffrey D. Beck, Kirk Reiff, James B. Abshire
Publikováno v:
SPIE Proceedings.
A 16 element HgCdTe e-APD detector has been developed for lidar receivers that has significant improvements in sensitivity in the spectral range from < 1μm to 4 μm. A demonstration detector consisting of a 4x4 APD detector array, with 80 μm square
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
George W. Turner, Joseph P. Donnelly, Robert J. Bailey, John J. Zayhowski, Michael J. Manfra, Mohamed A. Diagne, Michael K. Connors, E.K. Duerr, Michael J. Grzesik
Publikováno v:
SPIE Proceedings.
At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm
Pseudo-planar Ge-on-Si single photon avalanche diode detector with record low noise-equivalent power
Autor:
Ross W. Millar, Bhavana Benakaprasad, Jaroslaw Kirdoda, Conor Coughlan, Fiona Thorburn, Gerald S. Buller, Xin Yi, Laura L. Huddleston, Scott Watson, Zoe M. Greener, Douglas J. Paul
Publikováno v:
Quantum Technology: Driving Commercialisation of an Enabling Science II.
Single-photon avalanche diode (SPAD) detectors are of significant interest for numerous applications, including light detection and ranging (LIDAR), and quantum technologies such as quantum-key distribution and quantum information processing. Here we
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim